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AUIRFR2607ZTR-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsauirfr2607ztr-vb
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AUIRFR2607ZTR-VB

VBsemi Elec · MOSFETs · TO-252

AUIRFR2607ZTR-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate - control input for the N-channel MOSFET. Absolute maximum VGS = ±20 V; typical VGS(th) = 2.5-5 V (VDS = VGS, ID = 250 µA). Input capacitance Ciss ≈ 2400 pF; gate resistance Rg ≈ 1.6 Ω (typ).
2 D passive Drain - high-side power terminal of the N-channel MOSFET. VDS(max) = 100 V; continuous ID = 45 A at TC = 25 °C (package limited); pulsed IDM = 140 A. Also electrically tied to the TO-252 tab.
3 S passive Source - low-side power terminal of the N-channel MOSFET and reference for VGS. Integral body diode from Source to Drain: VSD ≈ 0.85 V (typ) at IS = 15 A, trr ≈ 80 ns (typ).
4 D passive Drain tab - the exposed metal heat-sink tab on the TO-252 package is electrically connected to the Drain. Used both as the primary drain connection and as the thermal path (RthJC = 0.85 °C/W typ).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AUIRFR2607ZTR-VB

CAD (KiCad official)

  • Symbol: AUIRFR2607ZTR-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 dfd6c907c7b04c1d, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF