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Contents

README

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AOD510-VB

VBsemi Elec · MOSFETs · TO-252

AOD510-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOS control terminal; VGS(th) = 1.5-2.5 V, VGS max ±20 V. Drives the N-channel MOSFET on when VGS > VGS(th).
2 D passive Drain. Power terminal of the N-channel MOSFET; VDS max = 30 V, ID = 100 A max (TC = 25 °C, package-limited to 90 A). Electrically connected to the TO-252 tab for heatsinking.
3 S passive Source. Power/return terminal of the N-channel MOSFET; body diode anode (VSD ≈ 0.8 V typ. at IS = 22 A). Continuous source-drain diode current up to 90 A.
4 D passive Drain tab. Large heat-sink pad on the TO-252 package, electrically identical to pin 2 (Drain). Intended for solder-down heatsinking to the PCB copper.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AOD510-VB

CAD (KiCad official)

  • Symbol: AOD510-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 87a85054eb13f54d, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF