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AOD444-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaod444-vb
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AOD444-VB

VBsemi Elec · MOSFETs · TO-252

AOD444-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET. Controls channel conduction between Drain and Source. VGS(th) = 1.0 V to 3.0 V; VGS absolute maximum = ± 20 V.
2 D passive Drain terminal of the N-channel MOSFET. Electrically connected to the exposed metal tab of the TO-252 package. VDS max = 60 V; continuous ID = 18 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET. Reference for VGS and VDS. Body diode anode is internally tied to Source (VSD = 0.8 V typ. at IF = 5.2 A).
4 D passive Drain tab (exposed thermal pad on TO-252). Electrically the Drain node - same net as pin 2. Serves as the primary thermal path (RthJC = 3 °C/W) and must be soldered to a copper pour for rated dissipation.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AOD444-VB

CAD (KiCad official)

  • Symbol: AOD444-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 2ae704b0d25461f2, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF