component

AGMH606H

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by Ray

AGM Semi MOSFETs, TO-263. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagmh606h
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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AGMH606H

AGM Semi · MOSFETs · TO-263

AGMH606H from AGM Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate - control terminal for the N-channel trench MOSFET. Gate threshold voltage VGS(th) = 2.0-4.0 V (typ 2.7 V); absolute maximum VGS = ±20 V.
2 D passive Drain - high-current terminal. BVDSS = 60 V; continuous ID = 80 A (Tc=25℃), pulsed IDM = 320 A. Electrically connected to the exposed tab of the TO-263 package.
3 S passive Source - current-return terminal for the N-channel MOSFET. Body diode is present between source (anode) and drain (cathode) with VSD ≈ 1.2 V max at IS=20 A.
4 D passive Drain (exposed tab) - TO-263 metal tab, electrically identical to pin 2 (Drain). Serves as the primary thermal path (RθJC = 1.5 ℃/W) and should be soldered to a copper pour for heat sinking.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package TO-263
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AGMH606H

CAD (KiCad official)

  • Symbol: AGMH606H
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (None pp, sha256 3c818eab58fced90, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF