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4N06L30-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristors4n06l30-vb
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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4N06L30-VB

VBsemi Elec · MOSFETs · TO-252

4N06L30-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Control terminal of the N-channel MOSFET; VGS(th) = 1.0-3.0 V, maximum VGS = ±20 V. Drives the channel between drain and source.
2 D passive Drain. Connected internally to the exposed metal tab. VDS max = 60 V; ID = 45 A at TC = 25 °C; rDS(on) = 0.025 Ω typ at VGS = 10 V.
3 S passive Source. Current-return terminal of the N-channel MOSFET; continuous source (body-diode) current IS = 23 A, diode VSD ≈ 1.0 V typ at IF = 15 A.
4 D (Tab) passive Drain tab. Large exposed heatsink pad electrically common with pin 2 (Drain). Provides the primary thermal path to the PCB (RthJC = 3.2 °C/W typ).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • 4N06L30-VB

CAD (KiCad official)

  • Symbol: 4N06L30-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 744aa030210e7dec, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF