Surface-mount N-channel enhancement-mode MOSFET in a SOT-23 package, a workhorse small-signal switch. Rated for 60 V drain-source, on-resistance of 5 ohm at VGS = 10 V (7.5 ohm at 5 V), and continuous drain current up to 210 mA. Low gate threshold and fast switching suit low-side switching, level shifting, and power-management gating. Body diode is intrinsic source-to-drain.

Pinout

Pin	Name	Type	Function
1	G	input	Gate. Controls the drain-source channel. Threshold VGS(TH) = 1.0V (min) to 2.5V (max); absolute max VGSS = ±20V continuous / ±40V pulsed. Input capacitance Ciss ≈ 22pF.
2	S	passive	Source. Reference terminal for VGS; typically tied to the low-side rail in a low-side switch. Body diode anode (intrinsic diode is source→drain, VSD ≈ 0.78V typ).
3	D	passive	Drain. Switched output terminal. BVDSS = 60V (min), continuous ID up to 210mA @ TA=+25°C, pulsed IDM = 800mA. Body diode cathode.

Key specifications

Parameter	Value
Type	N-channel enhancement-mode MOSFET
Drain-source voltage (BVDSS)	60 V
Gate threshold (VGS(th))	1.0-2.5 V
Gate-source voltage (VGSS)	±20 V (±40 V pulsed)
On-resistance (RDS(on))	5 Ω @ VGS=10 V (7.5 Ω @ 5 V)
Continuous drain current (ID)	210 mA @ 25 °C (IDM 800 mA)
Input capacitance (Ciss)	22 pF
Package	SOT-23
Body (L×W×H)	2.9 × 1.3 × 1.15 mm

Ordering variants

2N7002-7-F
2N7002-13-F

CAD (KiCad official)

Symbol: Transistor_FET:2N7002
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (5 pp, sha256 ff8e1c98f93c7e3a, retrieved 2026-08-17, tier: manufacturer)
Extractor: ds2sf (Claude) — every pin and dimension is cited to a datasheet page; refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF