SiR680ADP

{
  "schema_version": 1,
  "type": "component",
  "slug": "sir680adp",
  "title": "SiR680ADP",
  "brief": "N-Channel 80V MOSFET — 2.35mOhm RDS(on), 100A, PowerPAK SO-8, TrenchFET Gen IV, sync rect/DC-DC",
  "version": "1.0.1",
  "tags": [],
  "license": "MIT",
  "component": {
    "mpn": "SiR680ADP",
    "manufacturer": "Vishay Siliconix",
    "package": "",
    "pin_count": null,
    "category": "N-Channel MOSFET",
    "subcategory": "",
    "body_size": null,
    "parts": {},
    "distributor_links": {}
  },
  "readme": "## Description\n\nThe SiR680ADP is a high-performance N-channel 80 V power MOSFET from Vishay Siliconix in a PowerPAK SO-8 single package. Built on Vishay's TrenchFET Gen IV technology, it is optimized for the lowest RDS(on) x Qg and RDS(on) x Qoss figures of merit (FOM), making it ideal for synchronous rectification, primary-side switching, and DC-DC converter applications. The device delivers extremely low on-resistance (2.35 mOhm typical at VGS = 10 V) with a continuous drain current rating of 100 A at 25 C.\n\n## Features\n\n- TrenchFET Gen IV power MOSFET technology\n- Very low RDS(on): 2.35 mOhm typ at VGS = 10 V, ID = 20 A\n- Low RDS(on) x Qg figure of merit\n- Tuned for lowest RDS(on) x Qoss FOM\n- 100% Rg and UIS tested\n- Continuous drain current: 100 A (at 25 C case temperature)\n- Drain-source voltage: 80 V\n- Gate-source voltage: +/- 20 V\n- PowerPAK SO-8 package (leadless, exposed copper pad)\n- RoHS compliant, halogen-free\n\n## Pin Configuration\n\nPowerPAK SO-8 Single configuration:\n\n| Pin | Function |\n|-----|----------|\n| 1 | S (Source) |\n| 2 | S (Source) |\n| 3 | S (Source) |\n| 4 | G (Gate) |\n| 5 | D (Drain) |\n| 6 | D (Drain) |\n| 7 | D (Drain) |\n| 8 | D (Drain) |\n| Exposed pad | D (Drain) |\n\n## Absolute Maximum Ratings\n\nTA = 25 C unless otherwise noted.\n\n| Parameter | Symbol | Limit | Unit |\n|-----------|--------|-------|------|\n| Drain-source voltage | VDS | 80 | V |\n| Gate-source voltage | VGS | +/- 20 | V |\n| Continuous drain current (TC = 25 C) | ID | 100 | A |\n| Continuous drain current (TC = 70 C) | ID | 80.7 | A |\n| Continuous drain current (TA = 25 C) | ID | 24.5 | A |\n| Pulsed drain current (t <= 100 us) | IDM | 300 | A |\n| Continuous source-drain diode current | IS | 5.6 | A |\n| Single pulse avalanche current (L = 0.1 mH) | IAS | 80 | mJ |\n| Single pulse avalanche energy | EAS | 104 | mJ |\n| Maximum power dissipation (TC = 25 C) | PD | 125 | W |\n| Maximum power dissipation (TC = 70 C) | PD | 68.6 | W |\n| Maximum power dissipation (TA = 25 C) | PD | 6.25 | W |\n| Maximum power dissipation (TA = 70 C) | PD | 4.1 | W |\n| Operating junction and storage temperature | TJ, Tstg | -55 to +150 | C |\n| Soldering recommendations (peak temperature) | - | 260 | C |\n\n## Thermal Information\n\n| Parameter | Symbol | Typical | Maximum | Unit |\n|-----------|--------|---------|---------|------|\n| Maximum junction-to-ambient (t <= 10 s) | RthJA | - | 20 | C/W |\n| Maximum junction-to-case (drain) steady state | RthJC | 0.9 | 1.2 | C/W |\n\n## Electrical Characteristics\n\nTJ = 25 C unless otherwise noted.\n\n### Static\n\n| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |\n|-----------|--------|----------------|-----|-----|-----|------|\n| Drain-source breakdown voltage | V(BR)DSS | VGS = 0 V, ID = 1 mA | 80 | -- | -- | V |\n| VDS temperature coefficient | dV(BR)/dT | ID = 10 mA | -- | 61 | -- | mV/C |\n| V(BR)DSS temperature coefficient | dV(BR)DSS/TJ | ID = 250 uA | -- | -8.2 | -- | mV/C |\n| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 uA | 2 | -- | 3.5 | V |\n| Gate-source leakage | IGSS | VGS = +/- 20 V | -- | -- | 100 | nA |\n| Zero gate voltage drain current | IDSS | VGS = 0 V | -- | -- | 1 | uA |\n| On-state drain current | ID(on) | VGS = 10 V, VDS = 0.1 V | -- | 40 | -- | A |\n| Drain-source on-resistance | RDS(on) | VGS = 10 V, ID = 20 A | -- | 0.00235 | 0.00288 | Ohm |\n| Drain-source on-resistance | RDS(on) | VGS = 7.5 V, ID = 15 A | -- | 0.00270 | 0.00350 | Ohm |\n| Forward transconductance | gfs | VDS = 15 V, ID = 20 A | -- | 68 | -- | S |\n\n### Dynamic\n\n| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |\n|-----------|--------|----------------|-----|-----|-----|------|\n| Input capacitance | Ciss | VGS = 0 V, f = 1 MHz | -- | 4415 | -- | pF |\n| Output capacitance | Coss | VDS = 40 V | -- | 614 | -- | pF |\n| Reverse transfer capacitance | Crss | | -- | 26 | -- | pF |\n| Total gate charge | Qg | VDS = 40 V, ID = 20 A | -- | 55 | 83 | nC |\n| Gate-source charge | Qgs | VGS = 10 V | -- | 43 | 65 | nC |\n| Gate-drain charge | Qgd | | -- | 17 | -- | nC |\n| Gate resistance | Rg | f = 1 MHz | 0.3 | 0.88 | 1.5 | Ohm |\n| Turn-on delay time | td(on) | VDD = 40 V, RL = 2 Ohm | -- | 17 | 34 | ns |\n| Rise time | tr | ID = 20 A, RG = 1 Ohm | -- | 8 | 16 | ns |\n| Turn-off delay time | td(off) | | -- | 30 | 60 | ns |\n| Fall time | tf | | -- | 9 | 18 | ns |\n| Turn-on delay time | td(on) | VDD = 40 V, RL = 2 Ohm | -- | 15 | 30 | ns |\n| Rise time | tr | RG = 7.5 V, RG = 1 Ohm | -- | 9 | 18 | ns |\n| Turn-off delay time | td(off) | | -- | 30 | 60 | ns |\n| Fall time | tf | | -- | 9 | 18 | ns |\n\n### Drain-Source Body Diode Characteristics\n\n| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |\n|-----------|--------|----------------|-----|-----|-----|------|\n| Continuous source-drain diode current | IS | TC = 25 C | -- | -- | 125 | A |\n| Pulse diode forward current | ISM | | -- | -- | 300 | A |\n| Body diode voltage | VSD | IS = 6 A, VGS = 0 V | -- | 0.72 | 1.1 | V |\n| Body diode reverse recovery time | trr | | -- | 53 | 106 | ns |\n| Body diode reverse recovery charge | Qrr | IF = 20 A, di/dt = 100 A/us | -- | 70 | 140 | nC |\n| Reverse recovery fall time | ta | TJ = 25 C | -- | 30 | -- | ns |\n| Reverse recovery rise time | tb | | -- | 23 | -- | ns |\n\n## Packages\n\n### Ordering Information\n\n| Part Number | Package | Notes |\n|-------------|---------|-------|\n| SiR680ADP-T1-RE3 | PowerPAK SO-8 | Lead (Pb)-free and halogen-free |\n| SiR680ADP-T1-GE3 | PowerPAK SO-8 | Lead (Pb)-free and halogen-free, BLR on ICL |\n| SiR680ADP-T1-BE3 | PowerPAK SO-8 | Alternate manufacturing location |\n\n### PowerPAK SO-8 Dimensions\n\nBody: 5.05-5.26 mm (D) x 6.09-6.25 mm (E). Height: 0.97-1.12 mm (A). Lead pitch: 1.27 BSC mm. Exposed pad dimensions: 3.56-3.91 mm (D2) x 3.48-3.84 mm (E2).\n\n## Applications\n\n- Synchronous rectification\n- Primary side switching\n- DC-DC converters\n- OR-ing\n- Power supplies\n- Motor drive control\n- Battery and load switch\n",
  "author": {
    "id": "695820315b5f1e4db2fcf602",
    "name": "Kyle Bergstedt",
    "email": "[email protected]"
  },
  "visibility": {
    "public": true
  },
  "hero": null,
  "sample_prompts": [],
  "discovery_triggers": [],
  "discovery_pitch": null,
  "metadata": {},
  "created_at": "2026-05-28T05:36:55.970Z",
  "updated_at": "2026-05-28T05:36:55.970Z"
}