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ZTX853

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

ZTX853

Diodes Incorporated · Bipolar (BJT) · TO-92

ZTX853 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector; VCEO 100 V, VCBO 200 V, continuous IC 4 A, peak ICM 10 A.
2 B passive Base; VEBO maximum 6 V.
3 E passive Emitter; connect to the return side of the load current, with the device rated Ptot 1.2 W at Tamb = 25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 200 V 1
Collector-Emitter Voltage VCEO 100 V 1
Emitter-Base Voltage VEBO 6 V 1
Peak Pulse Current ICM 10 A 1
Continuous Collector Current IC 4 A 1
Practical Power Dissipation Ptotp 1.58 W Note 1 1
Power Dissipation Ptot 1.2 W Tamb = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 200 °C 1
Thermal Resistance Junction to Ambient Rth(j-amb) 150 °C/W 2
Thermal Resistance Junction to Case Rth(j-case) 50 °C/W 2
Collector-Base Breakdown Voltage V(BR)CBO 200 300 V IC = 100µA 1
Collector-Emitter Breakdown Voltage V(BR)CER 200 300 V IC = 1µA, RB ≤ 1kΩ 1
Collector-Emitter Breakdown Voltage V(BR)CEO 100 120 V IC = 10mA (Note 2) 1
Emitter-Base Breakdown Voltage V(BR)EBO 6 8 V IE = 100µA 1
Collector Cutoff Current ICBO 50 nA VCB = 150V 1
Collector Cutoff Current ICBO 1 µA VCB = 150V, Tamb = 100°C 1
Emitter Cutoff Current IEBO 10 nA VEB = 6V 1
Collector-Emitter Saturation Voltage VCE(sat) 14 50 mV IC = 0.1A, IB = 5mA 1
Collector-Emitter Saturation Voltage VCE(sat) 100 150 mV IC = 2A, IB = 100mA 1
Collector-Emitter Saturation Voltage VCE(sat) 160 200 mV IC = 4A, IB = 400mA (Note 2) 1
Base-Emitter Saturation Voltage VBE(sat) 960 1100 mV IC = 4A, IB = 400mA (Note 2) 1
Base-Emitter Turn-On Voltage VBE(on) 830 950 V IC = 4A, VCE = 2V (Note 2) 1
Static Forward Current Transfer Ratio hFE 100 IC = 10mA, VCE = 2V 1
Static Forward Current Transfer Ratio hFE 50 IC = 4A, VCE = 2V (Note 2) 1
Static Forward Current Transfer Ratio hFE 20 IC = 10A, VCE = 2V (Note 2) 1

CAD (KiCad official)

  • Symbol: ZTX853
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx853-etched.step / ztx853-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx853.step / ztx853.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 46acf4b0d7a75a91, retrieved 2026-10-16, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF