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IPAN60R600P7SXKSA1

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Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripan60r600p7sxksa1factory-2.0.0extractor-text

Verified IPAN60R600P7SXKSA1

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPAN60R600P7SXKSA1 · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C3288921, digikey 448-IPAN60R600P7SXKSA1-ND, mouser 726-IPAN60R600P7SXKS
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-kt29zyy3/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipan60r600p7sxksa1.kicad_sym✓ ipan60r600p7sxksa1.kicad_mod✓ ipan60r600p7sxksa1.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

IPAN60R600P7SXKSA1

Infineon Technologies · MOSFETs · TO-220

IPAN60R600P7SXKSA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin 1; gate-source voltage is limited to -20 V to 20 V static and -30 V to 30 V dynamic (AC f>1 Hz).
2 Drain passive Drain pin 2; continuous drain current is 6 A at TC=25°C and pulsed drain current is 16 A.
3 Source passive Source pin 3; the datasheet states no separate pin-specific limit for this terminal.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 6 A TC=25°C 3
Continuous drain current ID 4 A TC=100°C 3
Pulsed drain current ID,pulse 16 A TC=25°C 3
Avalanche energy, single pulse EAS 17 mJ ID=1.6A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.08 mJ ID=1.6A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 1.6 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 21 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Mounting torque 60 Ncm M2.5 screws 3
Continuous diode forward current IS 6 A TC=25°C 3
Diode pulse current IS,pulse 16 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V,ISD<=6A,Tj=25°C 3
Maximum diode commutation speed diF/dt 900 A/µs VDS=0...400V,ISD<=6A,Tj=25°C 3
Insulation withstand voltage VISO 2500 V Vrms,TC=25°C,t=1min 3
Thermal resistance, junction - case RthJC 5.98 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.08mA 5
Zero gate voltage drain current IDSS 10 µA VDS=600V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current IDSS 1 µA VDS=600V,VGS=0V,Tj=150°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.49 0.6 Ω VGS=10V,ID=1.7A,Tj=25°C 5
Drain-source on-state resistance RDS(on) 1.15 Ω VGS=10V,ID=1.7A,Tj=150°C 5
Gate resistance RG 6.3 Ω f=1MHz, open drain 5

CAD (KiCad official)

  • Symbol: IPAN60R600P7SXKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipan60r600p7sxksa1-etched.step / ipan60r600p7sxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipan60r600p7sxksa1.step / ipan60r600p7sxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 080585f143588b86, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF