component
SSM3K09FU
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3K09FU
TOSHIBA · MOSFETs · SOT-323
SSM3K09FU from TOSHIBA, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum, with threshold Vth of 1.1 to 1.8 V at VDS = 5 V, ID = 0.1 mA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, the common reference for the gate drive. |
| 3 | D | passive | Drain; drain-source voltage is limited to 30 V and DC drain current to 400 mA (800 mA pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±16 V, VDS = 0 | 2 | |
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | ID = 1 mA, VGS = 0 | 2 | ||
| Drain cut-off current | IDSS | 1 | μA | VDS = 30 V, VGS = 0 | 2 | ||
| Gate threshold voltage | Vth | 1.1 | 1.8 | V | VDS = 5 V, ID = 0.1 mA | 2 | |
| Forward transfer admittance | ⏐Yfs⏐ | 270 | mS | VDS = 5 V, ID = 200 mA (Note2: pulse test) | 2 | ||
| Drain-Source ON resistance | RDS(ON) | 0.5 | 0.7 | Ω | ID = 200 mA, VGS = 10 V (Note2: pulse test) | 2 | |
| Drain-Source ON resistance | RDS(ON) | 0.8 | 1.2 | Ω | ID = 200 mA, VGS = 4 V (Note2: pulse test) | 2 | |
| Drain-Source ON resistance | RDS(ON) | 1 | 1.7 | Ω | ID = 200 mA, VGS = 3.3 V (Note2: pulse test) | 2 | |
| Drain-Source voltage | VDS | 30 | V | Ta = 25°C | 1 | ||
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Drain current DC | ID | 400 | mA | DC, Ta = 25°C | 1 | ||
| Drain current pulse | IDP | 800 | mA | Pulse, Ta = 25°C | 1 | ||
| Drain power dissipation | PD | 150 | mW | Ta = 25°C, Note 1: mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad 0.6 mm² × 3) | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SSM3K09FU - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
ssm3k09fu-etched.step/ssm3k09fu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3k09fu.step/ssm3k09fu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
b87e1b68bb4bc41d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).