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Contents

README

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CMS4606B

Cmos · MOSFETs · SOP-8

CMS4606B from Cmos, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (VDS 30V, ID 6A).
2 G1 input Gate of the N-channel MOSFET (VGS max ±20V).
3 S2 passive Source of the P-channel MOSFET (VDS -30V, ID -6.5A).
4 G2 input Gate of the P-channel MOSFET (VGS max ±20V).
5 D2 passive Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 6.
6 D2 passive Drain of the P-channel MOSFET (VDS -30V, ID -6.5A), shorted with pin 5.
7 D1 passive Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 8.
8 D1 passive Drain of the N-channel MOSFET (VDS 30V, ID 6A), shorted with pin 7.

Key specifications

Parameter Value
Manufacturer Cmos
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-channel Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250μA 2
N-channel Static Drain-Source On-Resistance RDS(ON) 22 mΩ VGS=10V, ID=6A 2
N-channel Static Drain-Source On-Resistance RDS(ON) 34 mΩ VGS=4.5V, ID=5A 2
N-channel Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250μA 2
N-channel Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V 2
N-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-channel Continuous Source Current IS 6 A 2
N-channel Pulsed Source Current ISM 18 A VG=VD=0V, Force Current 2
N-channel Diode Forward Voltage VSD 1 V VGS=0V, IS=1A 2
P-channel Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250μA 3
P-channel Static Drain-Source On-Resistance RDS(ON) 40 mΩ VGS=-10V, ID=-4A 3
P-channel Static Drain-Source On-Resistance RDS(ON) 60 mΩ VGS=-4.5V, ID=-3A 3
P-channel Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250μA 3
P-channel Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V 3
P-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-channel Continuous Source Current IS 6.5 A 3
P-channel Pulsed Source Current ISM 20 A VG=VD=0V, Force Current 3
P-channel Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A 3
N-channel Drain-Source Voltage VDS 30 V 1
N-channel Continuous Drain Current ID 6 A 1
N-channel Continuous Drain Current ID 5 A @TC=70℃ 1
N-channel Pulsed Drain Current IDM 18 A 1
N-channel Single Pulse Avalanche Energy EAS 20 mJ 1
P-channel Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
P-channel Continuous Drain Current ID -6.5 A @TC=25℃ 1
P-channel Continuous Drain Current ID -5.3 A @TC=70℃ 1
P-channel Pulsed Drain Current IDM -20 A 1
P-channel Single Pulse Avalanche Energy EAS 35 mJ 1
Total Power Dissipation PD 2 W @TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Junction-to-Ambient (Steady-State) RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: CMS4606B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: cms4606b-etched.step / cms4606b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cms4606b.step / cms4606b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (3 pp, sha256 201658c2fb7cc99c, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF