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SI4058DY-T1-GE3

Public Made by Adom

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Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Contents

README

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SI4058DY-T1-GE3

Vishay Intertech · MOSFETs · SO-8

SI4058DY-T1-GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the single N-channel MOSFET; the datasheet gives the absolute maximum ratings VDS 100 V and VGS ±20 V for the device.
2 S passive Source terminal of the single N-channel MOSFET; the datasheet gives the absolute maximum ratings VDS 100 V and VGS ±20 V for the device.
3 S passive Source terminal of the single N-channel MOSFET; the datasheet gives the absolute maximum ratings VDS 100 V and VGS ±20 V for the device.
4 G input Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±20 V and a gate-source threshold of 1.2 V to 2.8 V at ID = 250 µA.
5 D passive Drain terminal of the N-channel MOSFET, internally common with pins 6, 7 and 8; the drain-source breakdown voltage is 100 V minimum.
6 D passive Drain terminal of the N-channel MOSFET, internally common with pins 5, 7 and 8; the drain-source breakdown voltage is 100 V minimum.
7 D passive Drain terminal of the N-channel MOSFET, internally common with pins 5, 6 and 8; the drain-source breakdown voltage is 100 V minimum.
8 D passive Drain terminal of the N-channel MOSFET, internally common with pins 5, 6 and 7; the drain-source breakdown voltage is 100 V minimum.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 10.3 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 8.3 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 7 A TA = 25 °C, notes b, c 1
Continuous Drain Current ID 5.5 A TA = 70 °C, notes b, c 1
Pulsed Drain Current IDM 50 A t = 300 μs 1
Continuous Source-Drain Diode Current IS 5 A TC = 25 °C 1
Single Pulse Avalanche Current IAS 15 A L = 0.1 mH 1
Avalanche Energy EAS 11.2 mJ 1
Maximum Power Dissipation PD 5.6 W TC = 25 °C 1
Maximum Power Dissipation PD 3.6 W TC = 70 °C 1
Maximum Power Dissipation PD 2.6 W TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (t 10 s) RthJA 39 48 °C/W t 10 s, notes b, d 1
Maximum Junction-to-Ambient (steady state) RthJA 90 °C/W steady state, note d 1
Maximum Junction-to-Foot (Drain), steady state RthJF 18 22 °C/W steady state 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.8 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 100 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0217 0.026 Ω VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.0266 0.033 Ω VGS = 4.5 V, ID = 8 A 2
Total Gate Charge Qg 12 18 nC VDS = 50 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 5.8 9 nC VDS = 50 V, VGS = 4.5 V, ID = 10 A 2
Output Charge Qoss 22.5 35 nC VDS = 50 V, VGS = 0 V 2
Gate Resistance Rg 0.8 2.2 4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 4.5 V, Rg = 1 2
Rise Time tr 17 34 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 11 22 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 4.5 V, Rg = 1 2
Fall Time tf 8 16 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 4.5 V, Rg = 1 2
Turn-On Delay Time td(on) 7 14 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Rise Time tr 16 32 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 12 24 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 7 14 ns VDD = 50 V, RL = 5, ID 10 A, VGEN = 10 V, Rg = 1 2
Continuous Source-Drain Diode Current IS 5 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Voltage VSD 0.81 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 56 112 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 60 120 nC IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: SI4058DY-T1-GE3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: si4058dy-t1-ge3-etched.step / si4058dy-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si4058dy-t1-ge3.step / si4058dy-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 2ec677432c276557, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF