component
TPD6S300ARUKR
Public Made by Adomby adom
Texas Instruments Surge Suppressors, WQFN-20-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPD6S300ARUKR
Texas Instruments · Surge Suppressors · WQFN-20-EP(3x3)
TPD6S300ARUKR from Texas Instruments, in a WQFN-20-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C_SBU1 | bidirectional | Connector side of the SBU1 OVP FET; connect to either SBU pin of the USB Type-C connector, or to a USB2.0 pin to protect USB2.0 instead (absolute max 24 V). |
| 2 | C_SBU2 | bidirectional | Connector side of the SBU2 OVP FET; connect to either SBU pin of the USB Type-C connector, or to a USB2.0 pin to protect USB2.0 instead (absolute max 24 V). |
| 3 | VBIAS | passive | Pin for ESD support capacitor; place a 0.1-µF capacitor on this pin to ground (absolute max 24 V). |
| 4 | C_CC1 | bidirectional | Connector side of the CC1 OVP FET; connect to either CC pin of the USB Type-C connector (absolute max 24 V). |
| 5 | C_CC2 | bidirectional | Connector side of the CC2 OVP FET; connect to either CC pin of the USB Type-C connector (absolute max 24 V). |
| 6 | RPD_G2 | bidirectional | Short to C_CC2 if dead battery resistors are needed; if not needed, short pin to GND (absolute max 24 V). |
| 7 | RPD_G1 | bidirectional | Short to C_CC1 if dead battery resistors are needed; if not needed, short pin to GND (absolute max 24 V). |
| 8 | GND | power_in | Ground. |
| 9 | FLT | output | Open drain for fault reporting (absolute max 6 V). |
| 10 | VPWR | power_in | 2.7-V to 4.5-V power supply. |
| 11 | CC2 | bidirectional | System side of the CC2 OVP FET; connect to either CC pin of the CC/PD controller. |
| 12 | CC1 | bidirectional | System side of the CC1 OVP FET; connect to either CC pin of the CC/PD controller. |
| 13 | GND | power_in | Ground. |
| 14 | SBU2 | bidirectional | System side of the SBU2 OVP FET; connect to either SBU pin of the SBU MUX, or to a USB2.0 Phy pin when protecting USB2.0 pins. |
| 15 | SBU1 | bidirectional | System side of the SBU1 OVP FET; connect to either SBU pin of the SBU MUX, or to a USB2.0 Phy pin when protecting USB2.0 pins. |
| 16 | N.C. | unconnected | Unused pin; connect to Ground. |
| 17 | N.C. | unconnected | Unused pin; connect to Ground. |
| 18 | GND | power_in | Ground. |
| 19 | D2 | bidirectional | USB2.0 IEC ESD protection; connect to any of the USB2.0 pins of the USB Type-C connector. |
| 20 | D1 | bidirectional | USB2.0 IEC ESD protection; connect to any of the USB2.0 pins of the USB Type-C connector. |
| 21 | Thermal Pad | power_in | Internally connected to GND; used as a heatsink, connect to the PCB GND plane. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-20-EP(3x3) |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 21 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage VPWR | VPWR | -0.3 | 5 | V | 6 | ||
| Input voltage RPD_G1, RPD_G2 | VI | -0.3 | 24 | V | 6 | ||
| Output voltage FLT | VO | -0.3 | 6 | V | 6 | ||
| Output voltage VBIAS | VO | -0.3 | 24 | V | 6 | ||
| I/O voltage D1, D2 | VIO | -0.3 | 6 | V | 6 | ||
| I/O voltage CC1, CC2, SBU1, SBU2 | VIO | -0.3 | 6 | V | 6 | ||
| I/O voltage C_CC1, C_CC2, C_SBU1, C_SBU2 | VIO | -0.3 | 24 | V | 6 | ||
| Operating free air temperature | TA | -40 | 85 | °C | 6 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 6 | ||
| ESD HBM | V(ESD) | -2000 | 2000 | V | ANSI/ESDA/JEDEC JS-001 | 6 | |
| ESD CDM | V(ESD) | -500 | 500 | V | JESD22-C101 | 6 | |
| IEC contact discharge C_CC1, C_CC2, D1, D2 | V(ESD) | -8000 | 8000 | V | IEC 61000-4-2 | 6 | |
| IEC air-gap discharge C_CC1, C_CC2, D1, D2 | V(ESD) | -15000 | 15000 | V | IEC 61000-4-2 | 6 | |
| IEC contact discharge C_SBU1, C_SBU2 | V(ESD) | -6000 | 6000 | V | IEC 61000-4-2 | 6 | |
| IEC air-gap discharge C_SBU1, C_SBU2 | V(ESD) | -15000 | 15000 | V | IEC 61000-4-2 | 6 | |
| Input voltage VPWR | VPWR | 2.7 | 3.3 | 4.5 | V | 6 | |
| Input voltage RPD_G1, RPD_G2 | VI | 0 | 5.5 | V | 6 | ||
| FLT pull-up resistor power rail | VO | 2.7 | 5.5 | V | 6 | ||
| I/O voltage D1, D2 | VIO | -0.3 | 5.5 | V | 6 | ||
| I/O voltage CC1, CC2, C_CC1, C_CC2 | VIO | 0 | 5.5 | V | 6 | ||
| I/O voltage SBU1, SBU2, C_SBU1, C_SBU2 | VIO | 0 | 4.3 | V | 6 | ||
| VCONN current | IVCONN | 600 | mA | Current flowing into CC1/2 and out of C_CC1/2, VCCx, VC_CCx ≤ 250 mV | 6 | ||
| VCONN current | IVCONN | 1.25 | A | TJ ≤ 85°C | 6 | ||
| FLT pullup resistance | 1.7 | 300 | kΩ | 7 | |||
| VBIAS capacitance | 0.1 | µF | min 35-VDC rated; 50-VDC recommended | 7 | |||
| VPWR capacitance | 0.3 | 1 | µF | 7 | |||
| Junction-to-ambient thermal resistance | RθJA | 45.2 | °C/W | RUK (WQFN) 20 pins | 7 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 48.8 | °C/W | 7 | |||
| Junction-to-board thermal resistance | RθJB | 17.1 | °C/W | 7 | |||
| Junction-to-top characterization parameter | ψJT | 0.6 | °C/W | 7 | |||
| Junction-to-board characterization parameter | ψJB | 17.1 | °C/W | 7 | |||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 3.7 | °C/W | 7 | |||
| CC OVP FET on resistance, TJ ≤ 85°C | RON | 278 | 392 | mΩ | CCx = 5.5 V | 7 | |
| CC OVP FET on resistance, TJ ≤ 105°C | RON | 278 | 415 | mΩ | CCx = 5.5 V | 7 | |
| CC on resistance flatness | RON(FLAT) | 5 | mΩ | Sweep CCx voltage between 0 V and 1.2 V | 7 | ||
| CC equivalent on capacitance | CON_CC | 60 | 74 | 120 | pF | VC_CCx/VCCx = 0 V to 1.2 V, f = 400 kHz | 7 |
| Dead battery pull-down resistance | RD | 4.1 | 5.1 | 6.1 | kΩ | V_C_CCx = 2.6 V | 7 |
| Dead battery pulldown FET threshold voltage | VTH_DB | 0.5 | 0.9 | 1.2 | V | I_CC = 80 µA | 7 |
| OVP threshold on CC pins | VOVPCC | 5.75 | 6 | 6.2 | V | Place 5.5 V on C_CCx. Step up C_CCx until the FLT pin is asserted | 7 |
| Hysteresis on CC OVP | VOVPCC_HYS | 50 | mV | Place 6.5 V on C_CCx, step down until FLT deasserted | 7 | ||
| CC on bandwidth single ended (-3 dB) | BWON | 100 | MHz | C_CCx to CCx, 50-Ω system, Vcm = 0.1 V to 1.2 V | 7 | ||
| Short-to-VBUS tolerance CC pins | VSTBUS_CC | 24 | V | Hot-Plug C_CCx with a 1 meter USB Type C Cable, 30-Ω load on CCx | 8 | ||
| Short-to-VBUS system-side clamping voltage CC | VSTBUS_CC_CLAMP | 8 | V | Hot-Plug voltage C_CCx = 24 V. VPWR = 3.3 V. 30-Ω load on CCx | 8 | ||
| SBU OVP FET on resistance | RON | 4 | 6.5 | Ω | SBUx = 3.6 V. -40°C ≤ TJ ≤ +85°C | 8 | |
| SBU on resistance flatness | RON(FLAT) | 0.7 | 1.5 | Ω | Sweep SBUx 0 V to 3.6 V. -40°C ≤ TJ ≤ +85°C | 8 | |
| SBU equivalent on capacitance | CON_SBU | 6 | pF | VC_SBUx/VSBUx = 0.3 V to 3.6 V | 8 | ||
| OVP threshold on SBU pins | VOVPSBU | 4.35 | 4.5 | 4.7 | V | Place 3.6 V on C_SBUx. Step up C_SBUx until the FLT pin is asserted | 8 |
| Hysteresis on SBU OVP | VOVPSBU_HYS | 50 | mV | Place 5 V on C_CCx. Step down until FLT deasserted | 8 | ||
| SBU on bandwidth single ended (-3 dB) | BWON | 1000 | MHz | C_SBUx to SBUx, 50-Ω system, Vcm = 0.1 V to 3.6 V | 8 | ||
| Crosstalk | XTALK | -80 | dB | f = 1 MHz, Vcm1 = 3.6 V, Vcm2 = 0.3 V, open sides terminated to 50 Ω | 8 | ||
| Short-to-VBUS tolerance SBU pins | VSTBUS_SBU | 24 | V | Hot-Plug C_SBUx with 1 meter USB Type C Cable, 100-nF in series with 40-Ω to GND on SBUx | 8 | ||
| Short-to-VBUS system-side clamping voltage SBU | VSTBUS_SBU_CLAMP | 8 | V | Hot-Plug C_SBUx = 24 V. VPWR = 3.3 V. 150-nF in series with 40-Ω to GND on SBUx | 8 | ||
| VPWR under voltage lockout | VPWR_UVLO | 2.1 | 2.3 | 2.5 | V | Place 1 V on VPWR and raise until SBU or CC FETs turn on | 8 |
| VPWR UVLO hysteresis | VPWR_UVLO_HYS | 100 | 150 | 200 | mV | Place 3 V on VPWR and lower until FETs turn off | 8 |
| VPWR supply current | IVPWR | 90 | 135 | µA | VPWR = 3.3 V (typical), 4.5 V (maximum). -40°C ≤ TJ ≤ +85°C | 8 | |
| CC pin leakage when powered | ICC_LEAK | 5 | µA | VPWR = 3.3 V, VC_CCx = 3.6 V, CCx floating, leakage into C_CCx | 8 | ||
| SBU pin leakage when powered | ISBU_LEAK | 3 | µA | VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx floating. -40°C ≤ TJ ≤ +85°C | 9 | ||
| CC pin leakage in OVP (into C_CCx) | IC_CC_LEAK_OVP | 1200 | µA | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx = 0 V | 9 | ||
| SBU pin leakage in OVP (into C_SBUx) | IC_SBU_LEAK_OVP | 400 | µA | VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx = 0 V | 9 | ||
| CC pin leakage in OVP (out of CCx) | ICC_LEAK_OVP | 30 | µA | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx = 0 V | 9 | ||
| SBU pin leakage in OVP (out of SBUx) | ISBU_LEAK_OVP | -1 | 1 | µA | VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx = 0 V | 9 | |
| Dx pin leakage | IDx_LEAK | 1 | µA | V_Dx = 3.6 V | 9 | ||
| FLT low-level output voltage | VOL | 0.4 | V | IOL = 3 mA | 9 | ||
| Thermal shutdown rising threshold | TSD_RISING | 150 | 175 | °C | 9 | ||
| Thermal shutdown falling threshold | TSD_FALLING | 130 | 140 | °C | 9 | ||
| Thermal shutdown hysteresis | TSD_HYST | 35 | °C | 9 | |||
| Dx reverse stand-off voltage Dx to GND | VRWM_POS | 5.5 | V | Dx to GND. IDX ≤ 1 µA | 9 | ||
| Dx break-down voltage Dx to GND | VBR_POS | 7 | V | Dx to GND. IBR = 1 mA | 9 | ||
| Dx to GND capacitance | CIO | 1.7 | pF | f = 1 MHz, VIO = 2.5 V | 9 | ||
| Dx dynamic on-resistance | RDYN | 0.4 | Ω | Dx to GND or GND to Dx | 9 |
CAD (KiCad official)
- Symbol:
TPD6S300ARUKR - Footprint:
Package_DFN_QFN:UQFN-20-1EP_3x3mm_P0.4mm_EP1.85x1.85mm - 3D model: WQFN-20-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
tpd6s300arukr-etched.step/tpd6s300arukr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpd6s300arukr.step/tpd6s300arukr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (34 pp, sha256
52c644af1445f90a, retrieved 2026-10-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).