component
TK100E08N1
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownTK100E08N1
TOSHIBA · MOSFETs · TO-220
TK100E08N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage must stay within the absolute maximum rating VGSS = ±20 V. |
| 2 | Drain (heatsink) | passive | Drain terminal, electrically connected to the heatsink tab; the drain-source voltage is limited to VDSS = 80 V and the DC drain current is limited to 100 A by the package. |
| 3 | Source | passive | Source terminal of the MOSFET; the DC reverse drain current (IDR) is rated at 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 80 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current (DC) | ID | 214 | A | Silicon limit | 1 | ||
| Drain current (DC) | ID | 100 | A | Note 1,3 | 1 | ||
| Drain current (pulsed) | IDP | 568 | A | t = 1 ms | 1 | ||
| Power dissipation | PD | 255 | W | Tc = 25 | 1 | ||
| Single-pulse avalanche energy | EAS | 278 | mJ | Note 4 | 1 | ||
| Avalanche current | IAR | 100 | A | Note 1 | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 0.49 | /W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 83.3 | /W | 2 | |||
| Gate leakage current | IGSS | -0.1 | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 80 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | 60 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 1.0 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 2.6 | 3.2 | mΩ | VGS = 10 V, ID = 50 A | 3 | |
| Reverse drain current (DC) | IDR | 100 | A | 4 | |||
| Reverse drain current (pulsed) | IDRP | 568 | A | 4 | |||
| Diode forward voltage | VDSF | -1.2 | V | IDR = 100 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
TK100E08N1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk100e08n1-etched.step/tk100e08n1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk100e08n1.step/tk100e08n1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
8604c3f1f3bb2c87, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).