component
DMN2065UWQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN2065UWQ-7
Diodes Incorporated · MOSFETs · SOT-323
DMN2065UWQ-7 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V absolute maximum, with a threshold of 0.35 V min to 1 V max at ID = 250 µA. |
| 2 | S | passive | Source; body diode forward current is rated 1.2 A maximum and the device is rated for a 20 V drain-source voltage. |
| 3 | D | passive | Drain; VDSS is 20 V, continuous drain current is 2.8 A at VGS = 4.5 V and TA = +25°C, and pulsed drain current is 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ±10V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.35 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 52 | 56 | mΩ | VGS = 4.5V, ID = 2A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 59 | 65 | mΩ | VGS = 2.5V, ID = 2A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 60 | 93 | mΩ | VGS = 1.8V, ID = 1A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 75 | 140 | mΩ | VGS = 1.5V, ID = 0.5A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Continuous Drain Current, Steady State | ID | 2.8 | A | VGS = 4.5V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, Steady State | ID | 2.3 | A | VGS = 4.5V, TA = +70°C, Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 3.1 | A | VGS = 4.5V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 2.6 | A | VGS = 4.5V, TA = +70°C, Note 6 | 2 | ||
| Continuous Drain Current, Steady State | ID | 2.2 | A | VGS = 1.8V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, Steady State | ID | 1.7 | A | VGS = 1.8V, TA = +70°C, Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 2.4 | A | VGS = 1.8V, TA = +25°C, Note 6 | 2 | ||
| Continuous Drain Current, t<10s | ID | 1.9 | A | VGS = 1.8V, TA = +70°C, Note 6 | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Body Diode Forward Current | IS | 1.2 | A | Note 5 | 2 | ||
| Total Power Dissipation | PD | 0.43 | W | Note 5 | 2 | ||
| Total Power Dissipation | PD | 0.7 | W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient, Steady State | RθJA | 296 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 252 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, Steady State | RθJA | 178 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 151 | °C/W | Note 6 | 2 | ||
| Forward Transfer Admittance | /Yfs/ | 7 | S | VDS = 5V, ID = 3.8A | 2 | ||
| Input Capacitance | Ciss | 400 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 73.8 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65.6 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 5.4 | nC | VGS = 4.5V, VDS = 10V, ID = 6A | 2 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | VGS = 4.5V, VDS = 10V, ID = 6A | 2 | ||
| Gate-Drain Charge | Qgd | 1.4 | nC | VGS = 4.5V, VDS = 10V, ID = 6A | 2 | ||
| Turn-On Delay Time | tD(on) | 3.5 | ns | VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω | 2 | ||
| Turn-On Rise Time | tR | 9.7 | ns | VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 23.8 | ns | VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω | 2 | ||
| Turn-Off Fall Time | tF | 7.2 | ns | VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminal Connections Indicator: See Diagram • Terminals: Finish Matte Tin Annealed over Alloy42 Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMN2065UWQ-7 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dmn2065uwq-7-etched.step/dmn2065uwq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2065uwq-7.step/dmn2065uwq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
a9a870163ddb0633, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).