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Contents

README

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MSG30T65FS

MASPOWER · IGBT Transistors / Modules · TO-220F

MSG30T65FS from MASPOWER, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with a maximum gate-emitter voltage VGES of ±20 V and a threshold VGE(th) of 4.5 V to 6.5 V.
2 C passive Collector terminal, with VCES of 650 V, continuous collector current of 60 A at 25 °C and 30 A at 100 °C, and pulsed ICM of 120 A.
3 E passive Emitter terminal, also the anti-parallel diode anode, with diode forward current of 60 A at 25 °C and 30 A at 100 °C.

Key specifications

Parameter Value
Manufacturer MASPOWER
Package TO-220F
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: MSG30T65FS
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MASPOWER datasheet (11 pp, sha256 360fa8c4ab4d8305, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF