component
WGD65R550G
Public Made by Adomby adom
Wild Goose MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWGD65R550G
Wild Goose · MOSFETs · TO-252
WGD65R550G from Wild Goose, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal (labelled G(1) and 1.Gate); gate-source voltage is rated ±30 V in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal (labelled D(2) and 2.Drain); drain-source voltage is rated 650 V, with continuous drain current of 8 A at TC = 25 °C and 5 A at TC = 100 °C. |
| 3 | S | passive | Source terminal (labelled S(3) and 3.Source); it is the reference for the gate-source voltage rating of ±30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wild Goose |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Continuous drain current | ID | 8 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 5 | A | TC = 100°C | 1 | ||
| Pulsed drain current | ID pulse | 32 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -30 | 30 | V | 1 | ||
| Power dissipation | Ptot | 73 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 65 | mJ | L=30mH, Rg=30Ω | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction, case, max | RthJC | 1.7 | °C/W | 2 | |||
| Thermal resistance, junction, ambient, max | RthJA | 143 | °C/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 3 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=650V, VGS=0V, TC=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 0.5 | 100 | µA | VDS=650V, VGS=0V, TC=150°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.42 | 0.55 | Ω | VGS=10V, ID=4A, TC=25°C | 2 | |
| Body diode forward voltage | VSD | 0.6 | 0.85 | 1.1 | V | VGS=0V, ISD=4A | 3 |
| Body diode reverse recovery time | trr | 210 | ns | Isd=4A, dI/dt=100A/us, Vds=400V | 3 |
CAD (KiCad official)
- Symbol:
WGD65R550G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
wgd65r550g-etched.step/wgd65r550g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wgd65r550g.step/wgd65r550g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wild Goose datasheet (8 pp, sha256
d4945a8273a9b432, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).