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Contents

README

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AO4822

JSMSEMI · MOSFETs · SOP-8

AO4822 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the first N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V).
2 G1 input Gate of the first N-channel MOSFET; gate-source voltage is rated ±20V (VGSS).
3 S2 passive Source of the second N-channel MOSFET; the device is rated 30V VDSS and ±20V VGSS, with 8A continuous drain current at TA=25°C (VGS=10V).
4 G2 input Gate of the second N-channel MOSFET; gate-source voltage is rated ±20V (VGSS).
5 D1 passive Drain of the first N-channel MOSFET; drain-source voltage is rated 30V (VDSS).
6 D1 passive Drain of the first N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS).
7 D2 passive Drain of the second N-channel MOSFET; drain-source voltage is rated 30V (VDSS).
8 D2 passive Drain of the second N-channel MOSFET (second drain pin, tied to the same drain); drain-source voltage is rated 30V (VDSS).

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Gate Threshold Voltage VGS(th) 1 1.5 1.9 V VDS=VGS, IDS=250mA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 mA TJ=85°C 2
Drain-Source On-state Resistance RDS(ON) 17.5 27 mW VGS=10V, IDS=8A 2
Drain-Source On-state Resistance RDS(ON) 23 30 mW VGS=4.5V, IDS=7A 2
Drain-Source On-state Resistance RDS(ON) 35 45 mW VGS=2.5V, IDS=7A 2
Diode Forward Voltage VSD 0.7 1.1 V ISD=1A, VGS=0V 2
Gate Resistance RG 1.3 1.7 2.3 W VGS=0V, VDS=0V, F=1MHz 3
Turn-on Delay Time td(ON) 5.9 10 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 3
Turn-on Rise Time tr 10 17 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 3
Turn-off Delay Time td(OFF) 17 35 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 3
Turn-off Fall Time tf 4 9 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 3
Total Gate Charge Qg 10.2 14 nC VDS=15V, VGS=10V, IDS=8A 3
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 8 A TA=25°C, VGS=10V 2
Continuous Drain Current ID 6.5 A TA=70°C, VGS=10V 2
300ms Pulsed Drain Current IDM 40 A 300ms pulse, VGS=10V 2
Diode Continuous Forward Current IS 1 A 2
Avalanche Current (Single Pulse) IAS 9 A 2
Avalanche Energy, Single Pulse EAS 20 mJ L=0.5mH 2
Maximum Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Maximum Power Dissipation PD 1.7 W TA=25°C 2
Maximum Power Dissipation PD 1.08 W TA=70°C 2
Thermal Resistance-Junction to Ambient RqJA 48 °C/W t≤10s 2
Thermal Resistance-Junction to Ambient RqJA 74 °C/W Steady State 2
Thermal Resistance-Junction to Lead RqJL 32 °C/W Steady State 2

CAD (KiCad official)

  • Symbol: AO4822
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4822-etched.step / ao4822-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4822.step / ao4822.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (11 pp, sha256 6db34609be6bcb09, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF