component
SMMBTA56LT3G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSMMBTA56LT3G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
SMMBTA56LT3G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base voltage limit VEBO is -4 V and IEBO is -0.1 µA at VEB=-4 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage limit VEBO is -4 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; limits are VCBO -80 V, VCEO -80 V and IC -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | -80 | V | Ta=25°C | 1 | ||
| Collector-base voltage | VCBO | -80 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | -4 | V | Ta=25°C | 1 | ||
| Collector current | IC | -500 | mA | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 225 | mW | Ta=25°C | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RΘJA | 555 | /W ℃ | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | -80 | V | IC=-100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -4 | V | IE=-100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB=-80V, IE=0 | 1 | ||
| Collector cut-off current | ICEO | -1 | µA | VCE=-60V, IB=0 | 1 | ||
| Emitter-base breakdown voltage (IEBO row, printed label) | IEBO | -0.1 | µA | VEB=-4V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 100 | 400 | VCE=-1V, IC=-10mA | 1 | ||
| DC current gain | hFE(2) | 100 | VCE=-1V, IC=-100mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.25 | V | IC=-100mA, IB=-10mA | 1 | ||
| Base-emitter voltage | VBE | -1.2 | V | VCE=-1V, IC=-100mA | 1 | ||
| Transition frequency | fT | 50 | MHz | VCE=-1V, IC=-100mA, f=100MHz | 1 |
CAD (KiCad official)
- Symbol:
SMMBTA56LT3G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbta56lt3g-hxy-etched.step/smmbta56lt3g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbta56lt3g-hxy.step/smmbta56lt3g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
da2e1a241c34330d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).