component
CME5P10
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCME5P10
Cmos(广东场效应半导体) · IC · SOT-89
CME5P10 from Cmos(广东场效应半导体), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1 to -3 V at ID=-250uA. |
| 2 | D | passive | Drain; drain-source voltage -100 V, continuous drain current -5 A at TA=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -5 A and pulsed source current is -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-89 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | 150 | ℃ | 1 | |||
| Single Pulse Avalanche Energy | EAS | 62.5 | mJ | Note 1: VDS=-50V, VGS=-10V, L=5mH, IAS=-5A | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-ambient | R JA | 50 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 160 | 190 | mΩ | VGS=-10V, ID=-1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 220 | mΩ | VGS=-4.5V, ID=-1A | 2 | ||
| Drain-Source Leakage Current | IDSS | -25 | uA | VDS=-80V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VGS=VDS, ID=-250uA | 2 | |
| Continuous Source Current | IS | -5 | A | 2 | |||
| Pulsed Source Current | ISM | -20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -0.87 | -1.2 | V | VGS=0V, IS=-5A | 2 |
CAD (KiCad official)
- Symbol:
CME5P10 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
cme5p10-etched.step/cme5p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cme5p10.step/cme5p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
b36d50de1ef56b13, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).