component
CMS65N03
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMS65N03
Cmos(广东场效应半导体) · IC · SOP-8
CMS65N03 from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the device is rated VDS 30 V, VGS ±20 V and continuous ID 13 A at TA=25℃. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the device is rated VDS 30 V, VGS ±20 V and continuous ID 13 A at TA=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the device is rated VDS 30 V, VGS ±20 V and continuous ID 13 A at TA=25℃. |
| 4 | G | input | Gate terminal; the gate-source voltage is rated ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 30 V (VDS). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 30 V (VDS). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 30 V (VDS). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 30 V (VDS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOP-8 |
| Category | |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 13 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 11 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 52 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Note 1: VDD=15V, VGS=10V, L=0.5mH, IAS=22A | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Device mounted on 1in2 FR-4 board, 2oz copper (Note 2) | 1 | ||
| Thermal Resistance Junction-case | RθJC | 25 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 8 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 12 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| Continuous Source Current | IS | 13 | A | 2 | |||
| Pulsed Source Current | ISM | 52 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.84 | 1.2 | V | VGS=0V, IS=12A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMS65N03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms65n03-etched.step/cms65n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms65n03.step/cms65n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
cd05458edc5d931c, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).