component

NCE30TD60BF

Public Made by Adom

by adom

Wuxi NCE Power Semiconductor IGBT Transistors / Modules, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsnce30td60bffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NCE30TD60BF

Wuxi NCE Power Semiconductor · IGBT Transistors / Modules · TO-220F-3

NCE30TD60BF from Wuxi NCE Power Semiconductor, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the IGBT, with VGES rated ±30 V and gate threshold VGE(th) 4.0 V min to 6.0 V max at IC=1 mA.
2 C passive Collector (with antiparallel diode cathode); VCES 600 V, IC 30 A at TC=100°C (TO-220F rating), VCE(sat) 1.7 V typ and 1.9 V max at IC=30 A.
3 E passive Emitter (with antiparallel diode anode); main current return, with IC 30 A at TC=100°C and pulsed collector current 90 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 600 V 1
Gate-Emitter Voltage VGES -30 30 V 1
Collector Current IC 60 A 1
Collector Current @TC = 100°C IC 30 A TC = 100°C 1
Pulsed Collector Current ICplus 90 A tp limited by Tjmax 1
Turn-off safe operating area 90 A VCE=600V, Tj=150°C 1
Diode Continuous Forward Current @TC = 100°C IF 30 A TC = 100°C 1
Diode Maximum Forward Current IFM 90 A 1
Power Dissipation @ TC = 25°C PD 35.5 W TC = 25°C 1
Power Dissipation @TC = 100 °C PD 14.2 W TC = 100 °C 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 °C 1
Maximum Temperature for Soldering TL 260 °C 1
Short circuit withstand time tsc 3 us VGE=15.0V, VCC≤400V, Allowed number of short circuits<1000, Time between short circuits:≥1.0s, Tj≤150℃ 1
Thermal Resistance, Junction to case for IGBT RθJC 2.65 °C /W 2
Thermal Resistance, Junction to case for Diode RθJC 3.9 °C /W 2
Thermal Resistance, Junction to Ambient RθJA 78 °C /W 2
Collector-Emitter Breakdown Voltage V(BR)CES 600 V VGE=0V, ICE=1mA 2
Collector-Emitter Leakage Current ICES 4 uA VGE =0V, VCE=600V 2
Gate to Emitter Forward Leakage IGES(F) 200 nA VGE=+30V, VCE=0V 2
Gate to Source Reverse Leakage IGES(R) 200 nA VGE=-30V, VCE =0V 2
Collector-Emitter Saturation Voltage (Tj=25°C) VCE(sat) 1.7 1.9 V IC=30A, VGE=15V, Tj=25°C 2
Gate Threshold Voltage VGE(th) 4 5 6 V IC=1mA, VCE=VGE 2
Diode Forward Voltage VFM 1.7 1.9 V IF=30A 2
Collector-Emitter Saturation Voltage (Tj=150°C) VCE(sat) 1.9 V IC=30A, VGE=15V, Tj=150°C 2
Input Capacitance Cies 3552 pF VCE=25V, VGE=0V, f=1MHz 2
Output Capacitance Coes 106 pF VCE=25V, VGE=0V, f=1MHz 2
Reverse Transfer Capacitance Cres 67 pF VCE=25V, VGE=0V, f=1MHz 2
Total Gate Charge Qg 132 nC VCC=480V, IC=30A, VGE=15V 2
Gate to Emitter Charge Qge 28 nC VCC=480V, IC=30A, VGE=15V 2
Gate to Collector Charge Qgc 54 nC VCC=480V, IC=30A, VGE=15V 2
Short circuit collector current IC(SC) 190 A VGE=15V, VCC≤400V, tSC≤3us, Tj≤150℃ 2
Turn-on Delay Time td(ON) 19 ns VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Rise Time tr 17 ns VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Turn-Off Delay Time td(OFF) 166 ns VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Fall Time tf 16 ns VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Turn-On Switching Loss Eon 0.36 mJ VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Turn-Off Switching Loss Eoff 0.32 mJ VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Total Switching Loss Ets 0.68 mJ VCE=400V, IC=30A, VGE=0/15V, Rg=5Ω, Inductive Load 2
Reverse Recovery Time Trr 178 ns Vcc=400V, IF=30A, di/dt=200A/uS 2
Diode Peak Reverse Recovery Current IRRM 4 A Vcc=400V, IF=30A, di/dt=200A/uS 2
Diode Reverse Recovery Charge Qrr 0.4 uC Vcc=400V, IF=30A, di/dt=200A/uS 2

CAD (KiCad official)

  • Symbol: NCE30TD60BF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (9 pp, sha256 d540803a2e96f2c3, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF