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Contents

README

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SI2300

GOODWORK · MOSFETs · SOT-23

SI2300 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is rated ±12 V maximum.
2 SOURCE passive Source terminal of the N-channel MOSFET; the maximum body-diode continuous current IS is rated 2 A.
3 DRAIN passive Drain terminal of the N-channel MOSFET; the continuous drain current ID is rated 6 A with a drain-source voltage VDS of 20 V maximum.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 6 A 1
Pulsed Drain Current IDM 25 A 1
Maximum Body-Diode Continuous Current IS 2 A 1
Power Dissipation PD 1.25 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID = 250µA 2
Gate-source leakage current IGSS -100 100 nA VDS = 0V, VGS = ±12V 2
Zero gate voltage drain current IDSS 1 µA VDS = 16V, VGS = 0V 2
Gate threshold voltage VGS(th) 0.5 0.7 1 V VDS = VGS, ID = 250µA 2
Drain-source on-state resistance RDS(on) 22 27 mΩ VGS = 4.5V, ID = 5.0A 2
Diode forward voltage VSD 0.75 1 V VGS = 0V, IS = 1A 2
Drain-source on-state resistance RDS(on) 35 mΩ VGS = 2.5V, ID = 4.0A 2
Drain-source on-state resistance RDS(on) 73 mΩ VGS = 1.8V, ID = 2.0A 2
Forward transconductance gfS 4 S VDS = 5V, ID = 3.8A 2
Input capacitance Ciss 630 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 164 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 137 pF VDS = 10V, VGS = 0V, f = 1MHz 2
Gate resistance Rg 1.5 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Turn-on delay time td(on) 5.5 ns VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω 2
Rise time tr 14 ns VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω 2
Turn-off delay time td(off) 29 ns VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω 2
Fall time tf 10.2 ns VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω 2

CAD (KiCad official)

  • Symbol: SI2300
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2300-etched.step / si2300-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2300.step / si2300.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (3 pp, sha256 8c100d98a123ec28, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF