component
SI2300
Public Made by Adomby adom
GOODWORK MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2300
GOODWORK · MOSFETs · SOT-23
SI2300 from GOODWORK, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the gate-source voltage VGS is rated ±12 V maximum. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the maximum body-diode continuous current IS is rated 2 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; the continuous drain current ID is rated 6 A with a drain-source voltage VDS of 20 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 6 | A | 1 | |||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Maximum Body-Diode Continuous Current | IS | 2 | A | 1 | |||
| Power Dissipation | PD | 1.25 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 16V, VGS = 0V | 2 | ||
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-source on-state resistance | RDS(on) | 22 | 27 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Diode forward voltage | VSD | 0.75 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Drain-source on-state resistance | RDS(on) | 35 | mΩ | VGS = 2.5V, ID = 4.0A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 73 | mΩ | VGS = 1.8V, ID = 2.0A | 2 | ||
| Forward transconductance | gfS | 4 | S | VDS = 5V, ID = 3.8A | 2 | ||
| Input capacitance | Ciss | 630 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 164 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 137 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Gate resistance | Rg | 1.5 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | ||
| Turn-on delay time | td(on) | 5.5 | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 | ||
| Rise time | tr | 14 | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 | ||
| Turn-off delay time | td(off) | 29 | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 | ||
| Fall time | tf | 10.2 | ns | VGS = 5V, VDS = 10V, RL = 1.7Ω, RGEN = 6Ω | 2 |
CAD (KiCad official)
- Symbol:
SI2300 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2300-etched.step/si2300-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2300.step/si2300.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (3 pp, sha256
8c100d98a123ec28, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).