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8050SG-D-AE3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Contents

README

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8050SG-D-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

8050SG-D-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the NPN transistor; the datasheet's emitter-base breakdown limit is 5 V (VEBO) and the emitter-base breakdown test is at IE = 100μA.
2 B passive Base of the NPN transistor; it is driven with IB = 50mA for the stated saturation test at IC = 500mA, and the base-emitter saturation voltage is 1.2 V max at that condition.
3 C passive Collector of the NPN transistor; rated for collector current up to 700 mA, VCEO 20 V, VCBO 30 V, and 350 mW collector dissipation at TA = 25°C in SOT-23.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 30 V 2
Collector-Emitter Voltage VCEO 20 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current IC 700 mA 2
Collector Dissipation (SOT-23) PC 350 mW TA=25°C 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Collector-Base Breakdown Voltage BVCBO 30 V IC = 100μA, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO 20 V IC = 1mA, IB = 0 2
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100μA, IC = 0 2
Collector Cut-Off Current ICBO 1 uA VCB = 30V, IE = 0 2
Emitter Cut-Off Current IEBO 100 nA VEB = 5V, IC = 0 2
DC Current Gain hFE1 hFE1 100 VCE = 1V, IC = 1mA 2
DC Current Gain hFE2 hFE2 120 400 VCE = 1V, IC = 150 mA 2
DC Current Gain hFE3 hFE3 40 VCE = 1V, IC = 500mA 2
DC Current Gain hFE2 classification rank D hFE2 160 300 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 500mA, IB = 50mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 500mA, IB = 50mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1 V VCE = 1V, IC = 10mA 2
Current Gain Bandwidth Product fT 100 MHz VCE = 10V, IC = 50mA 2
Output Capacitance Cob 9 pF VCB = 10V, IE = 0, f = 1MHz 2

CAD (KiCad official)

  • Symbol: 8050SG-D-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 8050sg-d-ae3-r-etched.step / 8050sg-d-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 8050sg-d-ae3-r.step / 8050sg-d-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 6975c8797e2229ef, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF