component
STF15NM65N
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTF15NM65N
STMicroelectronics · MOSFETs · TO-220F-3
STF15NM65N from STMicroelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±25 V with a typical threshold of 3 V (2 V min, 4 V max) at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 650 V, continuous drain current 12 A at Tc = 25 °C, pulsed 48 A. |
| 3 | S | passive | Source; source-drain diode current is 12 A continuous and 48 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 650 | V | 3 | |||
| Gate source voltage | VGS | -25 | 25 | V | 3 | ||
| Drain current continuous | ID | 12 | A | Tc = 25 °C; limited by maximum junction temperature | 3 | ||
| Drain current continuous | ID | 7.56 | A | Tc = 100 °C | 3 | ||
| Drain current pulsed | IDM | 48 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 30 | W | Tc = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | ISD ≤12 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS | 3 | ||
| Insulation withstand voltage (RMS from all three leads to external heatsink) | VISO | 2500 | V | t = 1 s; TC = 25 °C | 3 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 3 | ||
| Avalanche current, repetitive or non-repetitive | IAS | 3 | A | Pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 187 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 3 | ||
| Thermal resistance junction-case | Rthjc | 4.17 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDD = 650 V, VGS = 0 | 4 | ||
| Zero gate voltage drain current | IDSS | 100 | µA | VDD = 650 V, VGS = 0, TC = 125 °C (defined by design, not subject to production test) | 4 | ||
| Gate body leakage | IGSS | -100 | 100 | nA | VGS = ±25 V, VDS = 0 V | 4 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | ID = 250 µA, VGS = VDS | 4 |
| Static drain-source on-resistance | RDS(on) | 0.35 | 0.38 | Ω | ID = 6 A, VGS = 10 V | 4 | |
| Source drain current | ISD | 12 | A | 5 | |||
| Source drain current (pulsed) | ISDM | 48 | A | Pulse width limited by safe operating area | 5 | ||
| Forward on voltage | VSD | 1.6 | V | ISD = 12 A, VGS = 0 V; pulsed: pulse duration = 300 µs, duty cycle 1.5 % | 5 | ||
| Reverse recovery time | trr | 428 | ns | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery charge | Qrr | 4.7 | µC | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery current | IRRM | 21.5 | A | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery time | trr | 570 | ns | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery charge | Qrr | 6.2 | µC | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery current | IRRM | 22 | A | ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |
CAD (KiCad official)
- Symbol:
STF15NM65N - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (15 pp, sha256
fddcc01c1e4c3423, retrieved 2026-10-15, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).