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Contents

README

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TPCA8053-H-VB

VBsemi Elec · MOSFETs · DFN5x6-8

TPCA8053-H-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 marked with dot); continuous source current 50 A (package limited).
2 S passive Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate terminal; gate-source voltage limited to ±20 V.
5 D passive Drain terminal; VDS rated 60 V, pulsed drain current 100 A.
6 D passive Drain terminal, tied to the same drain as pins 5, 7 and 8.
7 D passive Drain terminal, tied to the same drain as pins 5, 6 and 8.
8 D passive Drain terminal, tied to the same drain as pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (125 °C) IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (175 °C) IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance (125 °C) RDS(on) 0.016 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance (175 °C) RDS(on) 0.02 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = 4.5 V, ID = 15 A 2
Forward Transconductance gfs 60 S VDS = 15 V, ID = 20 A 2
Total Gate Charge Qg 47 70 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Turn-On Delay Time td(on) 10 20 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 35 50 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 20 30 ns VDD = 30 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Reverse Recovery Time trr 45 100 ns IF = 20 A, di/dt = 100 A/µs 2
Pulsed Source Current ISM 60 A TC = 25 °C 2
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Pulsed Drain Current IDM 100 A TC = 25 °C 1
Continuous Source Current (Diode Conduction) IS 50 A TC = 25 °C, package limited 1
Avalanche Current IAS 50 A TC = 25 °C 1
Single Avalanche Energy EAS 125 mJ L = 0.1 mH, duty cycle ≤ 1 % 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10 s) RthJA 15 18 °C/W t ≤ 10 sec, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Ambient (steady state) RthJA 40 50 °C/W Steady State, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1
Input Capacitance Ciss 2650 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Output Capacitance Coss 470 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 225 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 10 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2
Gate-Drain Charge Qgd 12 nC VDS = 30 V, VGS = 10 V, ID = 50 A 2

CAD (KiCad official)

  • Symbol: TPCA8053-H-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: tpca8053-h-vb-etched.step / tpca8053-h-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpca8053-h-vb.step / tpca8053-h-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 29d01a2b026274b1, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF