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SP40N02BGTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SP40N02BGTD

Siliup · MOSFETs · TO-263

SP40N02BGTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGSS is rated ±20 V.
2 D passive Drain terminal; drain-source voltage VDSS is rated 40 V and continuous drain current ID is 145 A at Tc=25℃.
3 S passive Source terminal; reference for the 40 V drain-source and ±20 V gate-source ratings.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 145 A Tc=25℃ 2
Continuous Drain Current ID 97 A Tc=100℃ 2
Pulse Drain Current IDM 580 A Tested 2
Single Pulse Avalanche Energy EAS 529 mJ VDD=20V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 175 W Tc=25℃ 2
Power Dissipation PD 70 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.71 ℃/W 2
Maximum Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Drain Cut-Off Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.7 2.3 V VGS=VDS, ID=250uA 2
Drain-Source ON Resistance RDS(ON) 2.5 3.2 mΩ VGS=10V, ID=30A 2
Drain-Source ON Resistance RDS(ON) 3.5 4.7 mΩ VGS=4.5V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A, VGS=0V, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 145 A 2
Gate Resistance RG 2.9 Ω f=1MHz 2
Input Capacitance Ciss 2868 pF VDS=20V, VGS=0V, f=1MHz 2
Output Capacitance Coss 798 pF VDS=20V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 51 pF VDS=20V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 42 nC VDS=20V, VGS=10V, ID=85A 2
Gate-Source Charge Qgs 8.6 nC VDS=20V, VGS=10V, ID=85A 2
Gate-Drain Charge Qgd 11 nC VDS=20V, VGS=10V, ID=85A 2
Gate Plateau Voltage Vplateau 3.3 V 2
Turn-On Delay Time td(on) 10 nS VDD=20V, VGS=10V, RG=1.6Ω, ID=85A 2
Rise Time tr 3 nS VDD=20V, VGS=10V, RG=1.6Ω, ID=85A 2
Turn-Off Delay Time td(off) 35 nS VDD=20V, VGS=10V, RG=1.6Ω, ID=85A 2
Fall Time tf 4 nS VDD=20V, VGS=10V, RG=1.6Ω, ID=85A 2
Reverse Recovery Time Trr 18 nS IS=50A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 31 nC IS=50A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP40N02BGTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp40n02bgtd-etched.step / sp40n02bgtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp40n02bgtd.step / sp40n02bgtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 f0fe3ce8c75e3ad0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF