component
IRFI644GPBF
Public Made by Adomby adom
Vishay Intertech MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFI644GPBF
Vishay Intertech · MOSFETs · TO-220F-3
IRFI644GPBF from Vishay Intertech, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with a threshold of 2.0 V to 4.0 V (VDS = VGS, ID = 250 μA). |
| 2 | D | passive | Drain, connected to the tab; drain-source voltage is 250 V max and continuous drain current is 7.9 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous source-drain body diode current is 7.9 A and pulsed 32 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220F-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 250 | V | TC = 25 °C | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous drain current | ID | 7.9 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous drain current | ID | 5 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed drain current | IDM | 32 | A | TC = 25 °C | 1 | ||
| Single pulse avalanche energy | EAS | 600 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 Ω, IAS = 7.9 A | 1 | ||
| Repetitive avalanche current | IAR | 7.9 | A | TC = 25 °C | 1 | ||
| Repetitive avalanche energy | EAR | 4 | mJ | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 40 | W | TC = 25 °C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 4.8 | V/ns | ISD ≤ 7.9 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 300 | °C | For 10 s, 1.6 mm from case | 1 | |||
| Mounting torque | 0.6 | Nm | M3 screw | 1 | |||
| Maximum junction-to-ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum junction-to-case (drain) | RthJC | 3.1 | °C/W | 2 | |||
| Drain-source breakdown voltage | VDS | 250 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero gate voltage drain current | IDSS | 25 | μA | VDS = 250 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 250 | μA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.28 | Ω | VGS = 10 V, ID = 4.7 A | 2 | ||
| Forward transconductance | gfs | 6 | S | VDS = 50 V, ID = 4.7 A | 2 | ||
| Total gate charge | Qg | 68 | nC | VGS = 10 V, ID = 7.9 A, VDS = 200 V | 2 | ||
| Gate-source charge | Qgs | 11 | nC | VGS = 10 V, ID = 7.9 A, VDS = 200 V | 2 | ||
| Gate-drain charge | Qgd | 35 | nC | VGS = 10 V, ID = 7.9 A, VDS = 200 V | 2 | ||
| Gate input resistance | Rg | 0.3 | 1.4 | Ω | f = 1 MHz, open drain | 2 | |
| Continuous source-drain diode current | IS | 7.9 | A | 2 | |||
| Pulsed diode forward current | ISM | 32 | A | 2 | |||
| Body diode voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 7.9 A, VGS = 0 V | 2 | ||
| Body diode reverse recovery time | trr | 250 | 500 | ns | TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs | 2 | |
| Body diode reverse recovery charge | Qrr | 2.3 | 4.6 | μC | TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs | 2 | |
| VDS temperature coefficient | ΔVDS/TJ | 0.34 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Input capacitance | Ciss | 1300 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output capacitance | Coss | 330 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse transfer capacitance | Crss | 85 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Drain to sink capacitance | C | 12 | pF | f = 1.0 MHz | 2 | ||
| Turn-on delay time | td(on) | 11 | ns | VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 16 Ω | 2 | ||
| Rise time | tr | 24 | ns | VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 16 Ω | 2 | ||
| Turn-off delay time | td(off) | 53 | ns | VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 16 Ω | 2 | ||
| Fall time | tf | 24 | ns | VDD = 125 V, ID = 7.9 A, Rg = 9.1 Ω, RD = 16 Ω | 2 | ||
| Internal drain inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal source inductance | LS | 7.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
CAD (KiCad official)
- Symbol:
IRFI644GPBF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
3f7afc1c79e174a6, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).