component
HBC857C235
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHBC857C235
HXY MOSFET · Bipolar (BJT) · SOT-23
HBC857C235 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives no base-current rating, only IB = -5mA and -3uA to -30uA in test and curve conditions. |
| 2 | E | passive | Emitter of the PNP transistor; VEBO is -5V and IC is -0.1A continuous. |
| 3 | C | passive | Collector of the PNP transistor; VCBO is -50V, VCEO is -45V and IC is -0.1A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -50 | V | Ta=25°C | 1 | ||
| Collector-Emitter Voltage | VCEO | -45 | V | Ta=25°C | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta=25°C | 1 | ||
| Collector Current-Continuous | IC | -0.1 | A | Ta=25°C | 1 | ||
| Collector Power Dissipation | PC | 200 | mW | Ta=25°C | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | VCBO | -50 | V | IC= -10μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | -45 | V | IC= -10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE= -1μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.5 | μA | VCB=-45 V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.5 | μA | VEB= -5 V , IC=0 | 1 | ||
| DC current gain | hFE | 420 | 800 | VCE= -5V, IC= -2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-100mA, IB= -5 mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC= -100mA, IB= -5mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE= -5 V, IC= -10mA, f=100MHz | 1 | ||
| Collector capacitance | Cob | 4.5 | pF | VCB=-10V, f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
HBC857C235 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hbc857c235-etched.step/hbc857c235-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hbc857c235.step/hbc857c235.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
210a052e7f8d36cb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).