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Contents

README

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CB2301T-2.8A

CBI · MOSFETs · SOT-523

CB2301T-2.8A from CBI, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate of the P-channel MOSFET, rated for a gate-source voltage VGS of ±8 V.
2 SOURCE passive Source of the P-channel MOSFET, with a continuous source-drain diode current IS rated at -0.72 A in the maximum ratings.
3 DRAIN passive Drain of the P-channel MOSFET, rated for a drain-source voltage VDS of -20 V and a continuous drain current ID of -2.8 A.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -2.8 A 1
Pulsed Drain Current IDM -4.8 A 1
Continuous Source-Drain Diode Current IS -0.72 A 1
Maximum Power Dissipation PD 0.35 W 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W t≤5s 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID = -250µA 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250µA 2
Gate-source leakage IGSS -100 100 nA VDS = 0V, VGS = ±8V 2
Zero gate voltage drain current IDSS -1 µA VDS = -20V, VGS = 0V 2
Drain-source on-state resistance RDS(on) 0.09 0.12 Ω VGS = -4.5V, ID = -2.8A 2
Drain-source on-state resistance RDS(on) 0.11 0.17 Ω VGS = -2.5V, ID = -2.0A 2
Total gate charge Qg 5.5 10 nC VDS = -10V, VGS = -4.5V, ID = -3A 2
Total gate charge Qg 3.3 6 nC VDS = -10V, VGS = -2.5V, ID = -3A 2
Turn-on delay time td(on) 11 20 ns VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, Rg = 1Ω 2
Rise time tr 35 60 ns VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, Rg = 1Ω 2
Turn-off delay time td(off) 30 50 ns VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, Rg = 1Ω 2
Fall time tf 10 20 ns VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, Rg = 1Ω 2
Continuous source-drain diode current IS -1.3 A TC = 25℃ 2
Pulse diode forward current ISM -10 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -0.7A 2

CAD (KiCad official)

  • Symbol: CB2301T-2.8A
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: cb2301t-2-8a-etched.step / cb2301t-2-8a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cb2301t-2-8a.step / cb2301t-2-8a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 0c8182fa08064182, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF