component

S9013-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorss9013-msfactory-2.0.0extractor-text
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Symbol & Footprint

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Datasheet

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Contents

README

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S9013-MS

MSKSEMI · Bipolar (BJT) · SOT-23

S9013-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, and the emitter-base rating VEBO of 5 V is the only related maximum stated.
2 EMITTER passive Emitter terminal of the NPN transistor; the maximum rated emitter-base voltage VEBO is 5 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; the maximum rated collector current IC is 500 mA and collector-emitter voltage VCEO is 25 V.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC=0.1mA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 25 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE=0.1mA, IC=0 2
Collector cut-off current ICBO 0.1 uA VCB=40V, IE=0 2
Emitter cut-off current IEBO 0.1 uA VEB=5V, IC=0 2
DC current gain hFE(1) hFE(1) 120 400 VCE=1V, IC=50mA 2
DC current gain hFE(2) hFE(2) 40 VCE=1V, IC=500mA 2
Collector-emitter saturation voltage VCE(sat) 0.6 V IC=500mA, IB=50mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA, IB=50mA 2
Base-emitter voltage VBE 0.7 V VCB=1V,IC=10mA 2
Transition frequency fT 150 MHz VCE=6V,IC=20mA, f=30MHz 2
Collector output capacitance Cob 8 pF VCB=6V, IE=0, f=1MHz 2
Collector-base voltage VCBO 40 V 2
Collector-emitter voltage VCEO 25 V 2
Emitter-base voltage VEBO 5 V 2
Collector current IC 500 mA 2
Collector power dissipation PC 300 mW Ta=25℃ 2
Junction temperature Tj 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RθJA 416 ℃/W 2

CAD (KiCad official)

  • Symbol: S9013-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s9013-ms-etched.step / s9013-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s9013-ms.step / s9013-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 bae5caa888d901a1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF