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Contents

README

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ME7170

MATSUKI · MOSFETs · DFN-8(5x6)

ME7170 from MATSUKI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together.
2 S passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together.
3 S passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are tied together.
4 G input Gate terminal with a maximum gate-source voltage of ±20 V.
5 D passive Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V.
6 D passive Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V.
7 D passive Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V.
8 D passive Drain terminal, pins 5 to 8 are tied together, with a maximum drain-source voltage of 30 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer MATSUKI
Package DFN-8(5x6)
Category Transistors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Gate Threshold Voltage VGS(th) 1 2.2 V VDS=VGS, ID=250μA 2
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Drain-Source On-State Resistance RDS(ON) 2.4 2.6 mΩ VGS=10V, ID=25A 2
Drain-Source On-State Resistance RDS(ON) 3.3 3.9 mΩ VGS=4.5V, ID=19A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=25A, VGS=0V 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Continuous Drain Current ID 110 A TA=25℃ 1
Continuous Drain Current ID 90 A TA=70℃ 1
Pulsed Drain Current IDM 450 A TA=25℃ 1
Maximum Power Dissipation PD 56 W TA=25℃ 1
Maximum Power Dissipation PD 36 W TA=70℃ 1
Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Thermal Resistance Junction to Case RθJC 2.2 ℃/W Device mounted on 1in2 FR4 board with 2 oz copper 1
Total Gate Charge Qg 86 nC VDS=15V, VGS=10V, ID=20A 2
Total Gate Charge Qg 39 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Source Charge Qgs 19 nC VDS=15V, VGS=4.5V, ID=20A 2
Gate-Drain Charge Qgd 12 nC VDS=15V, VGS=4.5V, ID=20A 2
Input Capacitance Ciss 5406 pF VDS=15V, VGS=0V, F=1MHz 2
Output Capacitance Coss 487 pF VDS=15V, VGS=0V, F=1MHz 2
Reverse Transfer Capacitance Crss 418 pF VDS=15V, VGS=0V, F=1MHz 2
Turn-On Delay Time td(on) 27 ns VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A 2
Turn-On Rise Time tr 51 ns VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A 2
Turn-Off Delay Time td(off) 152 ns VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A 2
Turn-Off Fall Time tf 54 ns VDS=15V, RL=15Ω, VGS=10V, RG=6Ω, ID=1A 2

CAD (KiCad official)

  • Symbol: ME7170
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: me7170-etched.step / me7170-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); me7170.step / me7170.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MATSUKI datasheet (5 pp, sha256 3a2836f518c0b266, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF