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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

AD-MMBT3906

Changjing · Bipolar (BJT) · SOT-23

AD-MMBT3906 from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base of the PNP transistor; the datasheet gives VEBO of -5 V and IEBO of -100 nA max at VEB = -5 V.
2	EMITTER	passive	Emitter of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V min at IE = -10 µA.
3	COLLECTOR	passive	Collector of the PNP transistor; VCEO is -40 V, VCBO is -40 V and continuous collector current IC is -200 mA.

Key specifications

Parameter	Value
Manufacturer	Changjing
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-base voltage	VCBO		-40	V		2
Collector-emitter voltage	VCEO		-40	V		2
Emitter-base voltage	VEBO		-5	V		2
Collector continuous current	IC		-200	mA	Note 1: maximum allowed temperature Tj = 25°C	2
Collector power dissipation	PC		200	mW	Note 1: maximum allowed temperature Tj = 25°C	2
Thermal resistance from junction to ambient	RθJA		625	°C/W	Note 2: 1 inch² FR-4 board, 1oz copper, still air, Ta = 25°C	2
Operating junction and storage temperature range	Tj, Tstg	-55	150	°C		2
Collector-base breakdown voltage	V(BR)CBO	-40		V	IC = -10µA, IE = 0A	2
Collector-emitter breakdown voltage	V(BR)CEO	-40		V	IC = -1mA, IB = 0A	2
Emitter-base breakdown voltage	V(BR)EBO	-5		V	IE = -10µA, IC = 0A	2
Collector-emitter cut-off current	ICEX		-50	nA	VCE = -30V, VBE(off) = -3V	2
Collector-base cut-off current	ICBO		-100	nA	VCB = -40V, IE = 0A	2
Emitter-base cut-off current	IEBO		-100	nA	VEB = -5V, IC = 0A	2
DC current gain hFE(1)	hFE(1)	100	300		VCE = -1V, IC = -10mA	2
DC current gain hFE(2)	hFE(2)	60			VCE = -1V, IC = -50mA	2
DC current gain hFE(3)	hFE(3)	30			VCE = -2V, IC = -100mA	2
Collector-emitter saturation voltage	VCE(sat)		-0.3	V	IC = -50mA, IB = -5mA	2
Base-emitter saturation voltage	VBE(sat)		-0.95	V	IC = -50mA, IB = -5mA	2
Transition frequency	fT	300		MHz	VCE = -20V, IC = -10mA, f = 100MHz	2
Delay time	td		35	ns	VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = IB2 = -1mA	2
Rise time	tr		35	ns	VCC = -3V, VBE = -0.5V, IC = -10mA, IB1 = IB2 = -1mA	2
Storage time	ts		225	ns	VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA	2
Fall time	tf		75	ns	VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA	2

CAD (KiCad official)

Symbol: AD-MMBT3906
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: ad-mmbt3906-etched.step / ad-mmbt3906-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ad-mmbt3906.step / ad-mmbt3906.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Changjing datasheet (6 pp, sha256 8b100cb43991936e, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF