component

2SA812G

Public Made by Adom

by adom

Galaxy Bipolar Transistors - BJT, SOT-23. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor2sa812g
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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2SA812G

Galaxy · Bipolar Transistors - BJT · SOT-23

2SA812G from Galaxy, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base. Control terminal of the PNP BJT; VBE ≈ -0.62V typ. at IC=-1mA, VCE=-6V. Emitter-base breakdown VEBO = -5V.
2 E passive Emitter. Common terminal for the PNP; conducts IC+IB (up to ~100mA continuous). Reference for VBE and VCE.
3 C passive Collector. VCEO = -50V max, VCBO = -60V max, IC = -100mA continuous, PC = 200mW at Ta=25°C.

Key specifications

Parameter Value
Manufacturer Galaxy
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • 2SA812G
  • 2SA812GG

CAD (KiCad official)

  • Symbol: 2SA812G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2sa812g-etched.step / 2sa812g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa812g.step / 2sa812g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Galaxy datasheet (4 pp, sha256 0ca13079674b75aa, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF