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NE5517DR2G

Public Made by Adom

by adom

onsemi Special Purpose Amplifiers, SOIC-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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NE5517DR2G

onsemi · Special Purpose Amplifiers · SOIC-16

NE5517DR2G from onsemi, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IABCa input Amplifier bias input for amplifier A, setting the transconductance (IABC max 2.0 mA).
2 Da input Diode bias input A for the linearizing diodes (diode bias current max 2.0 mA).
3 +INa input Non-inverted input of amplifier A (differential input voltage max ±5.0 V).
4 -INa input Inverted input of amplifier A (differential input voltage max ±5.0 V).
5 VOa output Output A of the transconductance amplifier, push-pull current output with indefinite short-circuit duration.
6 V- power_in Negative supply (supply voltage up to 44 V total or ±22 V).
7 INBUFFERa input Buffer input A, Darlington buffer with typical input current 0.4 µA.
8 VOBUFFERa output Buffer output A, with output current limited to 20 mA and within package dissipation.
9 VOBUFFERb output Buffer output B, with output current limited to 20 mA and within package dissipation.
10 INBUFFERb input Buffer input B, Darlington buffer with typical input current 0.4 µA.
11 V+ power_in Positive supply, internally connected for output buffers and amplifiers (up to 44 V total or ±22 V).
12 VOb output Output B of the transconductance amplifier, push-pull current output with indefinite short-circuit duration.
13 -INb input Inverted input of amplifier B (differential input voltage max ±5.0 V).
14 +INb input Non-inverted input of amplifier B (differential input voltage max ±5.0 V).
15 Db input Diode bias input B for the linearizing diodes (diode bias current max 2.0 mA).
16 IABCb input Amplifier bias input for amplifier B, setting the transconductance (IABC max 2.0 mA).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-16
Category Amplifiers
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage VOS 0.4 5 mV IABC = 5.0 µA 4
Input Offset Voltage, overtemperature range VOS 5 mV Overtemperature Range 4
VOS including diodes VOS 0.5 5 mV Diode Bias Current (ID) = 500 µA 4
Input Offset Current IOS 0.1 0.6 µA 4
Input Bias Current IBIAS 0.4 5 µA 4
Input Bias Current, overtemperature range IBIAS 1 8 µA Overtemperature Range 4
Forward Transconductance gM 6700 9600 13000 µmho 4
Forward Transconductance, overtemperature range gM 5400 µmho Overtemperature Range 4
Peak Output Current IOUT 350 500 650 µA RL = 0, IABC = 500 µA 4
Peak Output Current, overtemperature range IOUT 300 µA RL = 0, Overtemperature Range 4
Peak Output Voltage Positive VOUT 12 14.2 V RL = ∞, 5.0 µA ≤ IABC ≤ 500 µA 4
Peak Output Voltage Negative VOUT -12 -14.4 V RL = ∞, 5.0 µA ≤ IABC ≤ 500 µA 4
Supply Current ICC 2.6 4 mA IABC = 500 µA, both channels 4
VOS Sensitivity ΔVOS/ΔV+, ΔVOS/ΔV− 20 150 µV/V Positive / Negative 4
Common-mode Rejection Ratio CMRR 80 110 dB 4
Common-mode Range -12 13.5 12 V ±12 min, ±13.5 typ 4
Differential Input Current IIN 0.02 100 nA IABC = 0, Input = ±4.0 V 4
Leakage Current 0.2 100 nA IABC = 0 (Refer to Test Circuit) 4
Input Resistance RIN 10 26 kΩ 4
Buffer Input Current INBUFFER 0.4 5 µA 4
VBE of Buffer 0.5 5 mV Refer to Buffer VBE Test Circuit 4
Avg. TC of Input Offset Voltage ΔVOS/ΔT 7 µV/°C 4
Avg. TC of Input Offset Current ΔIOS/ΔT 0.001 µA/°C 4
Avg. TC of Input Current ΔIB/ΔT 0.01 µA/°C 4
gM Tracking 0.3 dB 4
Crosstalk Referred to Input 100 dB 20 Hz < f < 20 kHz 4
Open-loop Bandwidth BW 2 MHz 4
Slew Rate SR 50 V/µs Unity Gain Compensated 4
Peak Buffer Output Voltage VOBUFFER 10 V 4
Supply Voltage VS 44 V VDC or ±22 V 3
Power Dissipation PD 1125 mW Tamb = 25 °C (Still Air), NE5517D 3
Differential Input Voltage VIN -5 5 V 3
Diode Bias Current ID 2 mA 3
Amplifier Bias Current IABC 2 mA 3
Buffer Output Current IOUT 20 mA 3
Operating Temperature Range Tamb 0 70 °C NE5517 3
Operating Junction Temperature TJ 150 °C 3
Storage Temperature Range Tstg -65 150 °C 3
Lead Soldering Temperature Tsld 230 °C 10 sec max 3
Thermal Resistance, Junction-to-Ambient RθJA 140 °C/W D Package 3

CAD (KiCad official)

  • Symbol: NE5517DR2G
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: ne5517dr2g-etched.step / ne5517dr2g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ne5517dr2g.step / ne5517dr2g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (16 pp, sha256 0953d81f4af530e4, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF