component

MMBTA42-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbta42-msfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MMBTA42-MS

MSKSEMI · Bipolar (BJT) · SOT-23

MMBTA42-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the datasheet tests hFE at VCE=10V and IC=1mA to 30mA, with VBE(sat) specified at IC=20mA and IB=2mA.
2 EMITTER passive Emitter terminal of the NPN transistor; emitter-base breakdown V(BR)EBO is rated at 5 V minimum with IE=100μA, and VEBO is 5 V maximum.
3 COLLECTOR passive Collector terminal of the NPN transistor; rated VCEO 300 V, VCBO 300 V, IC 0.3 A continuous (0.5 A peak), and PC 0.35 W.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 300 V IC= 100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 300 V IC= 1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE= 100μA, IC=0 2
Collector cut-off current ICBO 0.25 μA VCB=200V, IE=0 2
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 2
DC current gain hFE(1) 60 VCE= 10V, IC= 1mA 2
DC current gain hFE(2) 100 200 VCE= 10V, IC=10mA 2
Collector-emitter saturation voltage VCE(sat) 0.2 V IC=20mA, IB= 2mA 2
Base-emitter saturation voltage VBE(sat) 0.9 V IC= 20mA, IB=2mA 2
Transition frequency fT 50 MHz VCE= 20V, IC= 10mA, f=30MHz 2
Collector-base voltage VCBO 300 V 2
Collector-emitter voltage VCEO 300 V 2
Emitter-base voltage VEBO 5 V 2
Collector current, continuous IC 0.3 A 2
Collector current, peak ICM 0.5 A 2
Collector power dissipation PC 0.35 W 2
Junction temperature TJ 150 ℃ 2
Storage temperature Tstg -55 150 ℃ 2
Thermal resistance, junction to ambient RӨJA 357 ℃/W 2

CAD (KiCad official)

  • Symbol: MMBTA42-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta42-ms-etched.step / mmbta42-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta42-ms.step / mmbta42-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 6007714354499f49, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF