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Contents

README

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CSD85301Q2

Texas Instruments · MOSFETs · WSON-6(2x2)

CSD85301Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of FET 1 (20V VDS rating, 5.0A package-limited continuous drain current).
2 G1 input Gate of FET 1, ±10V maximum VGS with 0.9V typical threshold and optimized for a 5V gate driver.
3 D2 passive Drain of FET 2, 20V maximum VDS, shared with the D2 center pad on the package bottom.
4 S2 passive Source of FET 2 (20V VDS rating, 5.0A package-limited continuous drain current).
5 G2 input Gate of FET 2, ±10V maximum VGS with 0.9V typical threshold and optimized for a 5V gate driver.
6 D1 passive Drain of FET 1, 20V maximum VDS, shared with the D1 center pad on the package bottom.
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-6(2x2)
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 20 V TA = 25°C 1
Gate-to-Source Voltage VGS -10 10 V TA = 25°C 1
Continuous Drain Current (Package limited) ID 5 A TA = 25°C 1
Pulsed Drain Current IDM 26 A Pulse duration ≤100μs, duty cycle ≤1% 1
Power Dissipation PD 2.3 W TA = 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Avalanche Energy, single pulse EAS 3.8 mJ ID = 8.7A, L = 0.1mH, RG = 25Ω 1
Junction-to-Ambient Thermal Resistance (minimum Cu mounting area) RθJA 185 °C/W Device on FR4 with minimum Cu mounting area 3
Junction-to-Ambient Thermal Resistance (1 inch² 2oz Cu pad) RθJA 70 °C/W Device on FR4 with 1 inch² (6.45cm²), 2oz (0.071mm) Cu 3
Drain-to-Source Voltage BVDSS 20 V VGS = 0V, ID = 250μA 3
Drain-to-Source Leakage Current IDSS 1 μA VGS = 0V, VDS = 16V 3
Gate-to-Source Leakage Current IGSS 10 μA VDS = 0V, VGS = 10V 3
Gate-to-Source Threshold Voltage VGS(th) 0.6 0.9 1.2 V VDS = VGS, ID = 250μA 3
Drain-to-Source On-Resistance RDS(on) 65 99 mΩ VGS = 1.8V, ID = 0.5A 3
Drain-to-Source On-Resistance RDS(on) 33 39 mΩ VGS = 2.5V, ID = 5A 3
Drain-to-Source On-Resistance RDS(on) 25 29 mΩ VGS = 3.8V, ID = 5A 3
Drain-to-Source On-Resistance RDS(on) 23 27 mΩ VGS = 4.5V, ID = 5A 3
Input Capacitance Ciss 361 469 pF VGS = 0V, VDS = 10V, ƒ = 1MHz 3
Output Capacitance Coss 68 89 pF VGS = 0V, VDS = 10V, ƒ = 1MHz 3
Reverse Transfer Capacitance Crss 48 62 pF VGS = 0V, VDS = 10V, ƒ = 1MHz 3
Gate Charge Total (4.5V) Qg 4.2 5.4 nC VDS = 10V, ID = 5A 3
Diode Forward Voltage VSD 0.8 1 V ISD = 5A, VGS = 0V 3

CAD (KiCad official)

  • Symbol: CSD85301Q2
  • Footprint: Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
  • 3D model files: csd85301q2-etched.step / csd85301q2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd85301q2.step / csd85301q2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (15 pp, sha256 d4623adcf700327f, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF