component
TS1231LBX
Public Made by Adomby adom
Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTS1231LBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TS1231LBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O | passive | Protected I/O line of the unidirectional ESD clamp, rated for ±30kV air and ±30kV contact ESD per IEC61000-4-2 and 30A peak pulse current (8/20µs), with 12V nominal reverse working voltage (VRWM) and 140pF typical capacitance I/O-GND at 0V. |
| 2 | GND | power_in | Ground reference pin for the protection diode; the datasheet gives no separate electrical limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Leakage Current @ VRWM | IR | 0.1 | uA | VRWM = 12V, T = 25C | 2 | ||
| Reverse Breakdown Voltage @ IT | VBR | 13.3 | 17 | V | IT = 1mA | 2 | |
| Clamping Voltage @ IPP | VC | 21 | V | IPP = 30A, tp = 8/20μs | 2 | ||
| Maximum Peak Pulse Current (8/20μs) | IPP | 30 | A | 8/20μs | 2 | ||
| Peak Pulse Power (8/20μs) | PPK | 630 | W | 8/20μs | 2 | ||
| ESD per IEC61000-4-2 (Air) | -30 | 30 | kV | ESD per IEC61000-4-2 (Air) | 2 | ||
| ESD per IEC61000-4-2 (Contact) | -30 | 30 | kV | ESD per IEC61000-4-2 (Contact) | 2 | ||
| ESD voltage | VESD | -30 | 30 | kV | 2 | ||
| Operating Temperature | TOPT | -55 | 125 | C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | C | 2 | ||
| Parasitic Capacitance | CESD | 140 | pF | VR = 0V, f = 1MHz | 2 | ||
| Nominal Reverse Working Voltage | VRWM | 12 | V | 2 |
CAD (KiCad official)
- Symbol:
TS1231LBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
ts1231lbx-etched.step/ts1231lbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ts1231lbx.step/ts1231lbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (6 pp, sha256
f01dc0f8d9aee701, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).