component
STS10DN3LH5
Public Unreviewedby Ray
STMicroelectronics MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads on click. Unloads only if this page sits in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads on click. Unloads only if this page sits in the background.
PCB Footprint
Open full view ↗Loads on click. Unloads only if this page sits in the background.
Datasheet
Open in new tab ↗Loads on click. Unloads only if this page sits in the background.
README
markdownSTS10DN3LH5
STMicroelectronics · MOSFETs · SO-8
STS10DN3LH5 from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1. Return terminal for MOSFET 1 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 1 intrinsic body diode (VSD typ 1.1 V at ISD = 5 A). |
| 2 | G1 | input | Gate of MOSFET 1. Control input; VGS(th) typ 1 V (at ID = 250 µA), VGS absolute max ±22 V. Total gate charge Qg typ 4.6 nC at VGS = 5 V, VDD = 15 V, ID = 10 A. |
| 3 | S2 | passive | Source of MOSFET 2. Return terminal for MOSFET 2 channel current (ID up to 10 A continuous at TC = 25 °C). Also anode of MOSFET 2 intrinsic body diode. |
| 4 | G2 | input | Gate of MOSFET 2. Control input; VGS(th) typ 1 V, VGS absolute max ±22 V. Independent from G1 (dual device with two separate control gates). |
| 5 | D2 | passive | Drain of MOSFET 2 (pin 5 of the D2 pair). Tied internally to pin 6 to double the drain bond-wire/lead current capacity. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C. |
| 6 | D2 | passive | Drain of MOSFET 2 (pin 6 of the D2 pair). Internally common with pin 5. Also cathode of MOSFET 2 intrinsic body diode. |
| 7 | D1 | passive | Drain of MOSFET 1 (pin 7 of the D1 pair). Internally common with pin 8. VDS max 30 V, ID up to 10 A continuous at TC = 25 °C. |
| 8 | D1 | passive | Drain of MOSFET 1 (pin 8 of the D1 pair). Tied internally to pin 7 to double the drain lead current capacity. Also cathode of MOSFET 1 intrinsic body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
STS10DN3LH5
CAD (KiCad official)
- Symbol:
STS10DN3LH5 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (None pp, sha256
3ef6beac225d39d4, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).