component
INA102ASOIC8
Public Made by Adomby adom
analogysemi Instrumentation Amplifiers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownINA102ASOIC8
analogysemi · Instrumentation Amplifiers · SOIC-8
INA102ASOIC8 from analogysemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | RG | passive | Connect a resistor between the two RG pins (1 and 8) to set gain, using RG = 49.4kΩ/(G−1); for G = 1 the RG pins are left unconnected. |
| 2 | -IN | input | Signal negative input, whose input voltage range is −VS + 0.1 V to +VS − 2 V for the INA102. |
| 3 | +IN | input | Signal positive input, whose input voltage range is −VS + 0.1 V to +VS − 2 V for the INA102. |
| 4 | -VS | power_in | Negative power supply; the INA102 split-supply operating range is ±2 V to ±19 V. |
| 5 | REF | input | Output reference voltage input that defines the zero-output level, with an allowable range of 2 V within the supply voltages and a low-impedance connection recommended for best CMR. |
| 6 | OUTPUT | output | Amplifier output, referred to the REF pin, with a specified short-circuit current of ±17 mA over temperature. |
| 7 | +VS | power_in | Positive power supply; the INA102 split-supply operating range is ±2 V to ±19 V. |
| 8 | RG | passive | Connect a resistor between the two RG pins (1 and 8) to set gain, using RG = 49.4kΩ/(G−1); for G = 1 the RG pins are left unconnected. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | analogysemi |
| Package | SOIC-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating Temperature, TA, INA102 | TA | -55 | 125 | °C | INA102 | 4 | |
| Current, any pin except power supply | -10 | 10 | mA | Any pin except power supply | 4 | ||
| Storage Temperature | Tstg | -65 | 150 | °C | 4 | ||
| Supply Voltage | 20 | V | Supply ±VS | 4 | |||
| Soldering Temperature | 300 | °C | 10 s | 4 | |||
| Operating Voltage Range, split supply | 2 | 18 | 19 | V | Split supply, ±VS | 5 | |
| Operating Voltage Range, single supply | 4 | 36 | 38 | V | Single supply | 5 | |
| Specified Temperature Range, INA102 | -55 | 125 | °C | INA102 | 5 | ||
| Gain Range | G | 1 | 10 | K | G = 1 + (49.4kΩ / RG) | 6 | |
| Gain Error | 0.02 | 0.04 | % | VOUT = ±10V, G = 1 | 6 | ||
| Gain Error | 0.03 | 0.08 | % | VOUT = ±10V, G = 10 | 6 | ||
| Gain Error | 0.03 | 0.15 | % | VOUT = ±10V, G = 1000 | 6 | ||
| Nonlinearity | 0.8 | ppm | VOUT = −10V to +10V, G = 1, RL = 10kΩ | 6 | |||
| Nonlinearity | 4 | ppm | VOUT = −10V to +10V, G = 10, RL = 10kΩ | 6 | |||
| Nonlinearity | 30 | ppm | VOUT = −10V to +10V, G = 100, RL = 10kΩ | 6 | |||
| Nonlinearity | 60 | ppm | VOUT = −10V to +10V, G = 1000, RL = 10kΩ | 6 | |||
| Gain vs. Temperature | 0.5 | 2.5 | ppm/°C | G = 1 | 6 | ||
| Gain vs. Temperature | 5 | 26 | ppm/°C | Gain > 1 | 6 | ||
| Input Offset Voltage, VOSI | VOSI | -12 | 2.5 | 12 | μV | VS = ±18V | 6 |
| Input Offset Voltage, VOSI, overtemperature | VOSI | -17 | 17 | μV | VS = ±2V to ±19V, overtemperature | 6 | |
| Output Offset Voltage, VOSO | VOSO | -240 | 40 | 240 | μV | VS = ±18V | 6 |
| Output Offset Voltage, VOSO, overtemperature | VOSO | -420 | 420 | μV | VS = ±2V to ±19V, overtemperature | 6 | |
| Offset Referred to Input vs. Supply (PSR) | PSR | 108 | 133 | dB | VS = ±2V to ±20V, G = 1 | 6 | |
| Offset Referred to Input vs. Supply (PSR), overtemperature | PSR | 105 | dB | VS = ±2V to ±20V, G = 1, overtemperature | 6 | ||
| Offset Referred to Input vs. Supply (PSR) | PSR | 125 | 140 | dB | VS = ±2V to ±20V, G = 10 | 6 | |
| Offset Referred to Input vs. Supply (PSR), overtemperature | PSR | 125 | dB | VS = ±2V to ±20V, G = 10, overtemperature | 6 | ||
| Offset Referred to Input vs. Supply (PSR) | PSR | 130 | 144 | dB | VS = ±2V to ±20V, G = 100 | 6 | |
| Offset Referred to Input vs. Supply (PSR), overtemperature | PSR | 130 | dB | VS = ±2V to ±20V, G = 100, overtemperature | 6 | ||
| Offset Referred to Input vs. Supply (PSR) | PSR | 130 | 146 | dB | VS = ±2V to ±20V, G = 1000 | 6 | |
| Input Bias Current | 1 | 3 | nA | 6 | |||
| Input Bias Current, overtemperature | 3.5 | 10 | nA | Overtemperature | 6 | ||
| Input Offset Current | 0.6 | 2.2 | nA | 6 | |||
| Input Offset Current, overtemperature | 2.4 | 4 | nA | Overtemperature | 6 | ||
| Common-Mode Rejection Ratio, DC | CMRR | 97 | 104 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 1 | 7 | |
| Common-Mode Rejection Ratio, DC, overtemperature | CMRR | 90 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 1, overtemp | 7 | ||
| Common-Mode Rejection Ratio, DC | CMRR | 110 | 124 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 10 | 7 | |
| Common-Mode Rejection Ratio, DC, overtemperature | CMRR | 107 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 10, overtemp | 7 | ||
| Common-Mode Rejection Ratio, DC | CMRR | 129 | 141 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 100 | 7 | |
| Common-Mode Rejection Ratio, DC, overtemperature | CMRR | 128 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 100, overtemp | 7 | ||
| Common-Mode Rejection Ratio, DC | CMRR | 136 | 157 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 1000 | 7 | |
| Common-Mode Rejection Ratio, DC, overtemperature | CMRR | 136 | dB | VCM = (-VS + 0.1V) to (+VS, 2V), G = 1000, overtemp | 7 | ||
| Short Circuit Current, overtemperature | -17 | 17 | mA | Overtemperature | 7 | ||
| Reference Gain to Output | 1.2 | 27 | μV/V | 7 | |||
| Quiescent Current | IQ | 1.56 | 1.9 | mA | VS = ±2V to ±19V | 7 | |
| Quiescent Current, overtemperature | IQ | 2 | mA | Overtemperature | 7 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 90.6 | °C/W | SOIC-8 | 5 | ||
| Junction-to-Board Thermal Resistance | RθJB | 47.6 | °C/W | SOIC-8 | 5 | ||
| Junction-to-Top Characterization Parameter | ψJT | 3.6 | °C/W | SOIC-8 | 5 | ||
| Junction-to-Board Characterization Parameter | ψJB | 47 | °C/W | SOIC-8 | 5 | ||
| Junction-to-Case (Top) Thermal Resistance | RθJC(top) | 35 | °C/W | SOIC-8 | 5 | ||
| Junction-to-Case (Bottom) Thermal Resistance | RθJC(bot) | 50.8 | °C/W | SOIC-8 | 5 |
CAD (KiCad official)
- Symbol:
INA102ASOIC8 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ina102asoic8-etched.step/ina102asoic8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ina102asoic8.step/ina102asoic8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: analogysemi datasheet (25 pp, sha256
c668acc583d72f0c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).