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Contents

README

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TPS560430XDBVR

Texas Instruments · DC-DC Converters · SOT-23-6

TPS560430XDBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CB passive Bootstrap capacitor connection for the high-side FET driver. Connect a high-quality 100-nF capacitor from this pin to the SW pin. Absolute max CB-to-SW = 5.5 V.
2 GND power_in Power ground terminal, connected internally to the source of the low-side FET. Connect to system ground and to the ground side of C_IN and C_OUT; path to C_IN must be as short as possible.
3 FB input Feedback input to the converter. Connect a resistor divider from V_OUT to set the output voltage (V_REF = 1.00 V typ; fixed 3.3-V variant uses V_REF = 3.3 V). Never short this terminal to ground during operation.
4 EN input Precision enable input. Do not float. High = on (V_EN_H ~1.23 V), Low = off (V_EN_L ~1.1 V); can be tied to VIN. Adjustable UVLO can be implemented via an external resistor divider. Absolute max = VIN + 0.3 V.
5 VIN power_in Supply input terminal to the internal bias LDO and high-side FET. Operating input range 4 V to 36 V (absolute max 38 V). Connect input bypass capacitors C_IN directly between this pin and GND.
6 SW output Switching output of the converter. Internally connected to the source of the high-side FET and the drain of the low-side FET. Connect to the power inductor. Supports up to 600-mA continuous output current.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category PMIC
Pins 6

Ordering variants

Same part, different packaging or reel option.

  • TPS560430XDBVRXF
  • TPS560430XDBVRX3F
  • TPS560430XDBVRX
  • TPS560430XDBVRY
  • TPS560430XDBVRYF

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN to GND -0.3 38 V Over recommended TJ range -40 to 125 °C 4
FB to GND -0.3 5.5 V Over recommended TJ range -40 to 125 °C 4
SW to GND less than 10 ns transient -3.5 38 V Transient, less than 10 ns 4
CB to SW -0.3 5.5 V Over recommended TJ range -40 to 125 °C 4
Junction temperature TJ TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
EN to GND -0.3 V Maximum printed as VIN + 0.3 V 4
SW to GND -0.3 V Maximum printed as VIN + 0.3 4
VIN input voltage VIN 4 36 V VIN to GND 4
FB voltage FB 0 4.5 V 4
Output voltage VOUT 1 V Maximum printed as 95% of VIN 4
Output current IOUT 0 600 mA 4
Operating junction temperature range TJ -40 125 °C 4
EN voltage EN 0 V Maximum printed as VIN 4
Junction-to-ambient thermal resistance RθJA 173 °C/W DBV (6 pins) package 4
Junction-to-case (TOP) thermal resistance RθJC_T 116 °C/W DBV (6 pins) package 4
Junction-to-case (BOTTOM) thermal resistance RθJC_B 31 °C/W DBV (6 pins) package 4
Input voltage operation VIN 4 36 V 5
VIN UVLO rising threshold VIN_UVLO 3.55 3.75 4 V Rising threshold 5
VIN UVLO falling threshold VIN_UVLO 3.25 3.45 3.65 V Falling threshold 5
VIN UVLO hysteresis VIN_UVLO 0.3 V Hysteresis 5
Operating quiescent current (non-switching) IQ 80 120 µA PFM version, VEN = 3.3 V, VFB = 1.1V 5
Shutdown current ISHDN 3 10 µA VEN = 0 V 5
Enable rising threshold voltage VEN_H 1.1 1.23 1.36 V 5
Enable falling threshold voltage VEN_L 0.95 1.1 1.22 V 5
Enable hysteresis voltage VEN_HYS 0.13 V 5
Leakage current at EN pin IEN 10 200 nA VEN = 3.3 V 5
Reference voltage TJ = 25 °C VREF 0.995 1 1.005 V TJ = 25 °C 5
Reference voltage TJ = -40 °C to 125 °C VREF 0.985 1 1.015 V TJ = -40 °C to 125 °C 5
Leakage current at FB pin IFB 0.2 50 nA VFB = 1.2 V 5
Peak inductor current limit IHS_LIMIT 0.8 1.1 1.4 A 5
Valley inductor current limit ILS_LIMIT 0.62 0.8 0.98 A 5
Zero cross current ILS_ZC 20 mA PFM version 5
Hiccup threshold of FB pin VHICCUP 40 % % of reference voltage 5
High-side MOSFET ON-resistance RDS_ON_HS 450 mΩ TJ = 25 °C, VIN = 12 V 5
Low-side MOSFET ON-resistance RDS_ON_LS 240 mΩ TJ = 25 °C, VIN = 12 V 5
Thermal shutdown threshold TSHDN 170 °C 5
Thermal shutdown hysteresis THYS 12 °C 5
Internal soft-start time TSS 1.8 ms Time of internal reference to increase from 10% to 90% of VREF, VIN = 12 V 6
Hiccup time THICCUP 135 ms VIN = 12 V 6
Minimum turn-on time tON_MIN 60 ns IOUT = 600 mA 6
Minimum turn-off time tOFF_MIN 100 ns IOUT = 600 mA 6
Maximum turn-on time tON_MAX 7.5 µs 6
Oscillator frequency, 1.1-MHz version fSW 0.935 1.1 1.265 MHz 1.1-MHz version 6

CAD (KiCad official)

  • Symbol: TPS560430XDBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: tps560430xdbvr-etched.step / tps560430xdbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps560430xdbvr.step / tps560430xdbvr.glb are the bare package body.

3D model downloads

Two STEP files. Same geometry, different body top:

File Size Use it when
tps560430xdbvr.step 97 KB You want the bare part, or you mark your own boards.
tps560430xdbvr-etched.step 2.8 MB You want the part with TPS560430XDBVR already on it.

The marking in the etched file is real recessed geometry cut into the solid, not a texture or a decal: 678 faces against 117 in the bare model. It survives export, section views, and rendering in any CAD tool, and it drops straight into KiCad or Fusion with no extra setup.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 39cd49d6521912b5, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF