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TPD65R600C

Public Made by Adom

by adom

WUXI UNIGROUP MICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TPD65R600C

WUXI UNIGROUP MICRO · MOSFETs · TO-252

TPD65R600C from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V (VGSS), threshold 2.5 V to 4.0 V at 250 µA.
2 D passive Drain (center lead, also the exposed tab); drain-source voltage 650 V (VDSS) with continuous drain current of 7 A.
3 S passive Source; body diode continuous current up to 6.3 A (IS) at TC = 25 ºC.

Key specifications

Parameter Value
Manufacturer WUXI UNIGROUP MICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current (TJ = 25ºC) IDSS 1 μA VDS = 650V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current (TJ = 150ºC) IDSS 100 μA VDS = 650V, VGS = 0V, TJ = 150ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±30V 2
Gate-Source Threshold Voltage VGS(th) 2.5 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 0.56 0.62 Ω VGS = 10V, ID = 3A 2
Continuous Body Diode Current IS 6.3 A TC = 25ºC 2
Pulsed Diode Forward Current ISM 19 A 2
Body Diode Voltage VSD 0.9 1.2 V TJ = 25ºC, ISD = 7A, VGS = 0V 2
Drain-Source Voltage VDSS 650 V VGS = 0V 1
Continuous Drain Current ID 7 A 1
Pulsed Drain Current IDM 21 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 162 mJ Note 2: IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 1
Avalanche Current IAR 1.4 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Repetitive Avalanche Energy EAR 0.2 mJ Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Power Dissipation (TO-220, TO-251, TO-252 group) PD 63 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Case (TO-220, TO-251, TO-252 group) RthJC 2 ºC/W 1
Thermal Resistance, Junction-to-Ambient (TO-220, TO-251, TO-252 group) RthJA 62 ºC/W 1

CAD (KiCad official)

  • Symbol: TPD65R600C
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tpd65r600c-etched.step / tpd65r600c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpd65r600c.step / tpd65r600c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WUXI UNIGROUP MICRO datasheet (12 pp, sha256 23d44f81aaf60cec, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF