component
SI2308
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2308
HXY MOSFET · MOSFETs · SOT-23
SI2308 from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal (labelled PIN1 G); gate-source voltage is rated at ±20 V absolute maximum. |
| 2 | D | passive | Drain terminal (labelled PIN2 D); the device is rated for 60 V drain-source voltage and 2.5 A continuous drain current. |
| 3 | S | passive | Source terminal (labelled PIN3 S); the datasheet gives no pin-specific limit for this terminal beyond the device ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250uA | 2 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=44V, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS=44V, VGS=0, TJ=85℃ | 2 | ||
| On-State Drain Current | ID(ON) | 10 | A | VDS≧5V, VGS=4.5V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 72 | 85 | mΩ | VGS=10V | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 103 | mΩ | VGS=4.5V | 2 | ||
| Forward Transconductance | Gfs | 10 | S | VDS=5V | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | V | IS, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 2.5 | A | 1 | |||
| Drain Current-Pulsed | IDM | 10 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SI2308 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2308-etched.step/si2308-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2308.step/si2308.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
43a28b1c960f12a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).