component
2SK215-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK215-VB
VBsemi Elec · MOSFETs · TO-220AB
2SK215-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with VGS(th) specified at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain (also the tab/case); VDS up to 150 V, continuous ID 50 A at TC = 25 °C, and junction-to-case thermal resistance 0.9 °C/W. |
| 3 | S | passive | Source; continuous body-diode current 40 A and pulsed 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 150 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 120 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (125 °C) | IDSS | 50 | µA | VDS = 120 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current (175 °C) | IDSS | 250 | µA | VDS = 120 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 80 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Forward Transconductance | gfs | 10 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Total Gate Charge | Qg | 38 | 60 | nC | VDS = 75 V, VGS = 10 V, ID = 40 A | 2 | |
| Turn-On Delay Time | td(on) | 15 | 25 | ns | VDD = 75 V, RL = 1.80 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 130 | 200 | ns | VDD = 75 V, RL = 1.80 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 75 V, RL = 1.80 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 90 | 140 | ns | VDD = 75 V, RL = 1.80 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Continuous Source Current | IS | 40 | A | TC = 25 °C | 2 | ||
| Pulsed Source Current | ISM | 80 | A | TC = 25 °C | 2 | ||
| Diode Forward Voltage | VSD | 1 | 1.5 | V | IF = 40 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 100 | 150 | ns | IF = 40 A, dI/dt = 100 A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 0.25 | 0.6 | µC | IF = 40 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 15 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = 6 V, ID = 10 A | 2 | ||
| Drain-Source On-State Resistance (125 °C) | RDS(on) | 0.076 | Ω | VGS = 10 V, ID = 15 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance (175 °C) | RDS(on) | 0.1 | Ω | VGS = 10 V, ID = 15 A, TJ = 175 °C | 2 | ||
| Input Capacitance | Ciss | 2500 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 290 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 190 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Gate Resistance | Rg | 2 | Ω | 2 | |||
| Gate-Source Charge | Qgs | 13 | nC | VDS = 75 V, VGS = 10 V, ID = 40 A | 2 | ||
| Gate-Drain Charge | Qgd | 13 | nC | VDS = 75 V, VGS = 10 V, ID = 40 A | 2 | ||
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 25 °C, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 35 | A | TC = 125 °C, TJ = 175 °C | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Avalanche Current | IAR | 50 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 80 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 166 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.75 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | When mounted on 1" square PCB (FR-4) | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.9 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
2SK215-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
2sk215-vb-etched.step/2sk215-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk215-vb.step/2sk215-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
4de1311faaa46ac6, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).