component
FMMT624TA-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFMMT624TA-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
FMMT624TA-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage limited to 5 V (VEBO) and base drive sets collector current up to 1 A. |
| 2 | E | passive | Emitter of the NPN transistor, current return for the 1 A collector current. |
| 3 | C | passive | Collector; rated 150 V to emitter (VCEO), 170 V to base (VCBO) and 1 A continuous collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 170 | V | IC=100µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 150 | V | IC=10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB=150V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB=4V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 100 | VCE=10V, IC=1mA | 2 | |||
| DC current gain | hFE(2) | 100 | 300 | VCE=10V, IC=250mA | 2 | ||
| DC current gain | hFE(3) | 50 | VCE=10V, IC=500mA | 2 | |||
| DC current gain | hFE(4) | 10 | VCE=10V, IC=1A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat)(1) | 0.2 | V | IC=250mA, IB=25mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | 0.3 | V | IC=500mA, IB=50mA | 2 | ||
| Base-emitter turn-on voltage | VBE(on) | 1 | V | VCE=10V, IC=500mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=500mA, IB=50mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V,IC (test current garbled in text) | 2 | ||
| Collector output capacitance | Cob | 10 | pF | VCB=10V, IE=0 | 2 |
CAD (KiCad official)
- Symbol:
FMMT624TA-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fmmt624ta-hxy-etched.step/fmmt624ta-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fmmt624ta-hxy.step/fmmt624ta-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
8089a60f6abef8dd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).