component
600R65
Public Made by Adomby adom
GOODWORK MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown600R65
GOODWORK · MOSFETs · TO-252
600R65 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel super junction MOSFET; gate-source voltage is rated at ±30 V (VGSS). |
| 2 | Drain | passive | Drain of the MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7.3 A at TC=25°C. |
| 3 | Source | passive | Source of the MOSFET; the datasheet gives no separate source-pin limit, so the device-level ratings apply (VDSS 650 V, continuous ID 7.3 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain, Source voltage | VDSS | 650 | V | 1 | |||
| Gate, Source voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous drain current | ID | 7.3 | A | TC=25 oC | 1 | ||
| Continuous drain current | ID | 4.6 | A | TC=100 oC | 1 | ||
| Pulsed drain current | IDM | 21.9 | A | Pulse width tP limited by Tj,max | 1 | ||
| Power dissipation | PD | 25 | W | 1 | |||
| Single - pulse avalanche energy | EAS | 142 | mJ | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | 1 | |||
| Diode dv/dt ruggedness | dv/dt | 15 | V/ns | ISD ≤ ID, VDS peak ≤ V(BR)DSS | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum operating junction temperature | Tj | 150 | ℃ | 1 | |||
| Drain, Source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250uA | 2 |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS = 650V, VGS = 0V | 2 | ||
| Gate leakage current | IGSS | 100 | nA | VGS = ±30V, VDS = 0V | 2 | ||
| Drain-Source on state resistance | RDS(ON) | 0.51 | 0.6 | Ω | VGS = 10V, ID = 3.5A | 2 | |
| Continuous diode forward current | ISD | 7.3 | A | 2 | |||
| Diode forward voltage | VSD | 1.4 | V | ISD = 7.3A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
600R65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
600r65-etched.step/600r65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);600r65.step/600r65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (7 pp, sha256
049b96a56a735b4b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).