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Contents

README

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WSK30N20G

Winsok Semicon · MOSFETs · TO-263-2L

WSK30N20G from Winsok Semicon, in a TO-263-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with an absolute maximum gate-source voltage of ±20 V.
2 D passive Drain, connected to the exposed tab (the center lead position is cut off in this 2-lead package); rated 200 V drain-source and 40 A continuous at TC=25℃.
3 S passive Source; the body diode carries up to 36 A continuous source current.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package TO-263-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 40 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 28 A VGS @ 10V 1
Pulsed Drain Current IDM 150 A 1
Single Pulse Avalanche Energy EAS 273 mJ 1
Total Power Dissipation PD 90 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.83 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V , ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.098 V/℃ Reference to 25℃ , ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 57 68 mΩ VGS=10V , ID=15A 2
Gate Threshold Voltage VGS(th) 3 3.8 5 V VGS=VDS , ID =250uA 2
VGS(th) Temperature Coefficient △VGS(th) -4.57 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=160V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=160V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -1 1 nA VGS=±25V , VDS=0V 2
Forward Transconductance gfs 32 S VDS=5V , ID=15A 2
Total Gate Charge (10V) Qg 53 nC VDS=100V , VGS=10V , ID=15A 2
Gate-Source Charge Qgs 11 nC VDS=100V , VGS=10V , ID=15A 2
Gate-Drain Charge Qgd 15 nC VDS=100V , VGS=10V , ID=15A 2
Turn-On Delay Time Td(on) 30 ns VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω 2
Rise Time Tr 20 ns VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω 2
Turn-Off Delay Time Td(off) 21 ns VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω 2
Fall Time Tf 31 ns VDD=30V , VGS=10V , RG=6Ω, ID=15A, RL=30Ω 2
Input Capacitance Ciss 2445 pF VDS=30V , VGS=0V , f=1MHz 2
Output Capacitance Coss 129 pF VDS=30V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 24 pF VDS=30V , VGS=0V , f=1MHz 2
Continuous Source Current IS 36 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 150 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.3 V VGS=0V , IS=12A , TJ=25℃ 2
Reverse Recovery Time trr 48 nS IF=12A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 78 nC IF=12A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WSK30N20G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2L (KiCad packages3D, STEP)
  • 3D model files: wsk30n20g-etched.step / wsk30n20g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsk30n20g.step / wsk30n20g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 bc292198385fcb8d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF