component
HSM0056
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSM0056
HUASHUO · MOSFETs · SOP-8
HSM0056 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected in parallel with pins 2 and 3; continuous drain current is 9.5 A at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, connected in parallel with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, connected in parallel with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±20 V with threshold of 1.2 V min to 2.2 V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 6, 7 and 8; drain-source voltage is rated 100 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, connected in parallel with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 9.5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=100℃ | 7.5 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=30A | 1 | ||
| Avalanche Current | IAS | 30 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 3.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient (t≦10s) | RθJA | 40 | ℃/W | t≦10s | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V, ID=8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 30 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 9.5 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Gate Resistance | Rg | 1.1 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 17.9 | nC | VDS=50V, VGS=10V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 2.8 | nC | VDS=50V, VGS=10V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDS=50V, VGS=10V, ID=10A | 2 | ||
| Turn-On Delay Time | Td(on) | 13 | ns | VDD=30V, VGS=10V, RG=6, ID=1A | 2 | ||
| Rise Time | Tr | 6 | ns | VDD=30V, VGS=10V, RG=6, ID=1A | 2 | ||
| Turn-Off Delay Time | Td(off) | 30 | ns | VDD=30V, VGS=10V, RG=6, ID=1A | 2 | ||
| Fall Time | Tf | 29 | ns | VDD=30V, VGS=10V, RG=6, ID=1A | 2 | ||
| Input Capacitance | Ciss | 849 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 185 | pF | VDS=50V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=50V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSM0056 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm0056-etched.step/hsm0056-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm0056.step/hsm0056.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
bdab240715d9267c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).