component
BMD60N600C1
Public Made by Adomby adom
Bestirpower MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBMD60N600C1
Bestirpower · MOSFETs · DPAK
BMD60N600C1 from Bestirpower, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±30 V absolute maximum, with a threshold of 2 to 4 V at ID = 250 μA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-to-source voltage is 600 V minimum breakdown and continuous drain current is 8 A at TC = 25℃. |
| 3 | S | passive | Source; the body diode carries a continuous forward current of up to 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 600 | V | 1 | |||
| Gate to Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current, Continuous | ID | 8 | A | TC = 25℃ | 1 | ||
| Drain Current, Continuous | ID | 3.3 | A | TC = 125℃ | 1 | ||
| Drain Current, Pulsed | IDM | 24 | A | 1 | |||
| Power Dissipation | PD | 62.5 | W | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 81 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | 1 | |||
| Diode Recovery dv/dt ruggedness | dv/dt | 15 | V/ns | VDClink=400V; VDS,peak<V(BR)DSS | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Maximum Lead Temperature for Soldering | TL | 260 | ℃ | 1/8" from case for 10 seconds | 1 | ||
| Thermal Resistance, Junction to Case, max | RθJC | 2 | ℃/W | TC = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient, max | RθJA | 62 | ℃/W | TC = 25°C | 1 | ||
| Drain to Source Breakdown Voltage | BVDSS | 600 | V | VGS= 0 V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 600 V, VGS = 0 V, Tj=25°C | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS = VDS, ID = 250μA | 2 | |
| Static Drain to Source On Resistance | RDS(on) | 600 | mΩ | VGS = 10 V, ID = 3.5A, Tj=25°C | 2 | ||
| Continuous Diode Forward Current | ISD | 8 | A | 2 |
CAD (KiCad official)
- Symbol:
BMD60N600C1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
bmd60n600c1-etched.step/bmd60n600c1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmd60n600c1.step/bmd60n600c1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
9138882cf51109b8, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).