component
XR4616
Public Made by Adomby adom
XNRUSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownXR4616
XNRUSEMI · MOSFETs · SOP-8
XR4616 from XNRUSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS 30 V and ID 9 A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V and threshold 1.0 to 2.5 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS -30 V and ID -9 A. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V and threshold -1.0 to -2.5 V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 6, with pulsed drain current IDM of -30 A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 5, with pulsed drain current IDM of -30 A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 8, with pulsed drain current IDM of 24 A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 7, with pulsed drain current IDM of 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 30 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -30 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| N-ch Continuous Drain Current | ID | 9 | A | TC=25℃, VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID | -9 | A | TC=25℃, VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID | 8 | A | TC=100℃, VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID | -5 | A | TC=100℃, VGS @ 10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 24 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -30 | A | 1 | |||
| N-ch Single Pulse Avalanche Energy | EAS | 72 | mJ | 1 | |||
| P-ch Single Pulse Avalanche Energy | EAS | 62 | mJ | 1 | |||
| N-ch Avalanche Current | IAS | 26 | A | 1 | |||
| P-ch Avalanche Current | IAS | -21 | A | 1 | |||
| N-ch Total Power Dissipation | PD | 2.5 | W | TC=25℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 3.08 | W | TC=25℃ | 1 | ||
| Storage Temperature Range (N-ch and P-ch) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (N-ch and P-ch) | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 45 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 10 | 14 | mΩ | VGS=10V , ID=7A | 2 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 14 | 17 | mΩ | VGS=4.5V , ID=6A | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | 2 | |
| N-ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V , VGS=0V , TJ=25℃ | 2 | ||
| N-ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=30V , VGS=0V , TJ=55℃ | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| N-ch Single Pulse Avalanche Energy | EAS | 16 | mJ | VDD=25V , L=0.1mH , IAS=12A | 2 | ||
| N-ch Continuous Source Current | IS | 9 | A | 2 | |||
| N-ch Pulsed Source Current | ISM | 24 | A | VG=VD=0V , Force Current | 2 | ||
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=6A , TJ=25℃ | 2 | ||
| P-ch Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -30V, VGS=0V | 3 | ||
| P-ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID= -250μA | 3 |
| P-ch Static Drain-Source on-Resistance | RDS(on) | 20 | 27 | mΩ | VGS= -10V, ID= -7A | 3 | |
| P-ch Static Drain-Source on-Resistance | RDS(on) | 29 | 41 | mΩ | VGS= -4.5V, ID= -4A | 3 | |
| P-ch Maximum Continuous Drain to Source Diode Forward Current | IS | -9 | A | 3 | |||
| P-ch Maximum Pulsed Drain to Source Diode Forward Current | ISM | -30 | A | 3 | |||
| P-ch Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -7A | 3 |
CAD (KiCad official)
- Symbol:
XR4616 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
xr4616-etched.step/xr4616-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xr4616.step/xr4616.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (8 pp, sha256
97d5cbb3a0012379, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).